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Structural and electrochemical properties of iron- and nickel-substituted Li 2 MnO 3 cathodes in charged and discharged states

Autor: Hideka Shibuya, Kyosuke Doumae, Takashi Miyazaki, Sadanori Kuroshima, Ryota Yuge, Mitsuharu Tabuchi, Akio Toda, Noriyuki Tamura

Publikováno v: Journal of Power Sources. 365:117-125

Structural change and the charge compensation mechanism of lithium-rich layered cathode (Li1.23Fe0.15Ni0.15Mn0.46O2) in charged and discharged states were investigated. Selected area electron diffraction analysis revealed that in discharged state, an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa678d802f4cda7440826b56b166d788
https://doi.org/10.1016/j.jpowsour.2017.08.049

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Charge Compensation Mechanism during Cycles in Fe-Containing Li 2 MnO 3 Cathode for High Energy Density and Low-Cost Lithium-Ion Batteries

Autor: Mitsuharu Tabuchi, Akio Toda, Kentaro Nakahara, Sadanori Kuroshima, Takashi Miyazaki, Hideyuki Sato, Noriyuki Tamura, Ryota Yuge

Publikováno v: Electrochimica Acta. 189:166-174

The charge compensation mechanism during cycles was investigated in Fe-containing lithium-rich layered manganese oxides (Li1.26Mn0.52Fe0.22O2), which has a potential to be used as cathode materials for high energy density and low-cost lithium-ion bat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf83ed4f0ac8dbd2de6a822930097f7c
https://doi.org/10.1016/j.electacta.2015.12.041

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Ideal spread monolayer formation and surface pressure induced orientation in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) via hybridized with liquid crystal molecule on water

Autor: Takahiro Seki, Akio Toda, Shusaku Nagano

Publikováno v: Synthetic Metals. 159:835-838

Hydrophobic Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) [F8BT] formed an ideal spread monolayer on a water surface by the cospreading method with liquid crystal molecule, 4′-pentyl-4-cyanobiphenyl [5CB]. The F8BT/5CB hybrid monolayers were ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16ca7185ffb108987fbf7b5cc552ca56
https://doi.org/10.1016/j.synthmet.2009.01.021

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Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

Autor: T. Fukai, Nobuyuki Ikarashi, Hidetatsu Nakamura, Akio Toda

Publikováno v: Japanese Journal of Applied Physics. 47:2496-2500

Using high-precision nano-beam electron diffraction (NBD), we clarified the influences of stress liner and the stress of shallow trench isolation on channel strain in advanced metal–oxide–semiconductor field effect transistors (MOSFETs). For syst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f17f4d23262b4054e8cfc03845bfa912
https://doi.org/10.1143/jjap.47.2496

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Bias Temperature Instability Characterization of Advanced Gate Stacks

Autor: Markus Wilde, Katsuyuki Fukutani, Akio Toda, Yuden Teraoka, Masayuki Terai, Motofumi Saitoh, Ziyuan Liu, Akitaka Yoshigoe, Shinji Fujieda, Yoshinao Miura

Publikováno v: ECS Transactions. 6:185-202

We performed a physical and electrical characterization of the defects that would cause negative and positive bias temperature instability (NBTI, PBTI) in gate stacks that use SiO2, plasma-nitrided SiO2, HfSiON, and HfSiON with Ni- silicide electrode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff20381946da706e7ea307a30b9435b2
https://doi.org/10.1149/1.2728797

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Light emission from surfaces, thin films and particles induced by high-energy electron beam

Autor: Akio Toda, K. Araya, Naoki Yamamoto, Hiroki Sugiyama

Publikováno v: Surface and Interface Analysis. 31:79-86

Light emission generated by a high-energy electron passing through surfaces, thin films and particles of several materials were studied using a light detection system combined with a transmission electron microscope with an accelerating voltage of 20

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56113ca0140114bdfc93cde6b2302a51
https://doi.org/10.1002/sia.958

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Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction

Autor: Haruhiko Ono, Akio Toda, Nobuyuki Ikarashi

Publikováno v: Journal of Crystal Growth. 210:341-345

We examined the lattice strain distribution around local oxidation of silicon (LOCOS) in a semiconductor device by using highly accurate (1.8×10 −4 standard deviation) convergent-beam electron diffraction (CBED) at a nanometer-scale spatial resolu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0d5b018b9d3c2f8ab4b8b35e6728993
https://doi.org/10.1016/s0022-0248(99)00707-1

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