Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Akio Takatsuka"'
Publikováno v:
Applied Physics Express. 15:016501
We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, mea
Autor:
Shigenobu Yamakoshi, Jun Hirabayashi, Daiki Wakimoto, Yuki Koishikawa, Yoshiaki Fukumitsu, Inokuchi Daisuke, Akio Takatsuka, Quang Tu Thieu, Jun Arima, Akito Kuramata, Kohei Sasaki
Publikováno v:
DRC
Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$
Publikováno v:
Materials Science Forum. :899-902
3 kV normally-off SiC-buried gate static induction transistors (SiC-BGSITs) were fabricated by using an innovative fabrication process that was used by us previously to fabricate 0.7–1.2 kV SiC-BGSITs. The fabricated device shows the lowest specifi
Autor:
Shigenobu Yamakoshi, Akito Kuramata, Ravikiran Lingaparthi, Kohei Sasaki, Fumio Otsuka, Quang Tu Thieu, Akio Takatsuka
Publikováno v:
Applied Physics Express. 12:074008
β-Ga2O3 (001) Schottky barrier diodes (SBDs) fabricated on a halide vapor phase epitaxy-grown epilayer showed anomalous reverse leakage characteristics, which could not be explained through thermionic field emission theory. A systematic investigatio
Publikováno v:
Materials Science Forum. :962-965
We investigated the short-circuit capabilities of 1.2 kV normally-off SiC buried gate static induction transistors (SiC-BGSITs). The maximum short-circuit energy was found to be 35.6 J/cm2, which is twice that of normally-on SiC-BGSITs and 3.3–5.6
Publikováno v:
Materials Science Forum. :662-665
In this work, we succeeded in developing high performance normally-off SiC buried gate static induction transistors (SiC-BGSITs). To achieve the normally-off characteristics, design parameters around the channel region were optimized and process cond
Autor:
Makoto Kato, Kenji Fukuda, Sachiko Ito, Akio Takatsuka, Kazutoshi Kojima, Hajime Okumura, Shinsuke Harada
Publikováno v:
Materials Science Forum. :999-1004
UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle
Publikováno v:
Materials Science Forum. :941-944
In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early st
Publikováno v:
Materials Science Forum. :535-538
We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission el
Publikováno v:
IEEE Transactions on Electron Devices. 57:919-927
Fundamental short-circuit operations of silicon carbide static induction transistors with buried-gate structures (BGSITs) were experimentally clarified, with subsequent device simulations. The impacts of channel width and source length on short-circu