Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Akio Misaka"'
Publikováno v:
Journal of Photopolymer Science and Technology. 34:123-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ee08293dc8c78c1fd3f67a921f1a944
https://doi.org/10.2494/photopolymer.34.123
https://doi.org/10.2494/photopolymer.34.123
Publikováno v:
Journal of Photopolymer Science and Technology. 32:345-353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a9317412df9178c38620f6962d0f85
https://doi.org/10.2494/photopolymer.32.345
https://doi.org/10.2494/photopolymer.32.345
Autor:
Akio Misaka, Takashi Yuito, Takahiro Matsuo, Geert Vandenberghe, Masayuki Endo, Vincent Wiaux, Masaru Sasago, Lieve Van Look, Shigeo Irie
Publikováno v:
Japanese Journal of Applied Physics. 45:5396-5403
One of the most challenging issues for 45-nm-node contact hole printing is to ensure a sufficient process window required for day-to-day manufacturing, and to reduce large mask error enhancement factor (MEEF) to keep the critical dimension (CD) contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a281197c76d0790959337dbce78da81
https://doi.org/10.1143/jjap.45.5396
https://doi.org/10.1143/jjap.45.5396
Publikováno v:
SPIE Proceedings.
Novel photo-lithography is newly proposed named built-in lens mask lithography. The method emulates optical propagation plane in exposure system using binary transmittance and phase mask instead of projection lens. The performance of the built-in len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b08a1734e880477a13c1bab683d2f6c
https://doi.org/10.1117/12.2065251
https://doi.org/10.1117/12.2065251
Publikováno v:
SPIE Proceedings.
Cost effective micro lithography tool is demanded for fine micro devices. However, resolution of a conventional proximity exposure system is not sufficient below several micron feature size for deep focus depth. On the other hand, a reduction project
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa40131af14c4058e7f0e86a3ce71de
https://doi.org/10.1117/12.2046060
https://doi.org/10.1117/12.2046060
Autor:
Takashi Matsuda, Takashi Yuito, Akio Misaka, Yuuji Nonami, Yasuko Tabata, Shigeo Irie, Masaru Sasago, Tadami Shimizu, Taichi Koizumi
Publikováno v:
SPIE Proceedings.
Strong resolution enhancement technologies (RETs) combined with hyper-NA ArF immersion lithography with source and mask optimization (SMO) have become necessary to achieve sufficient resolution in 2Xnm node devices. Conventional SMO methods have focu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6ffb7353e1920a7e11707b3f0202a97
https://doi.org/10.1117/12.878727
https://doi.org/10.1117/12.878727
Autor:
Taichi Koizumi, Takashi Matsuda, Fumio Iwamoto, Akio Misaka, Shigeo Irie, Masaru Sasago, Tadami Shimizu, Hiroshi Sakaue, Takashi Yuito
Publikováno v:
SPIE Proceedings.
We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply Mask Enhancer on sub-100nm pitch contact hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67003ba5caa48d5da38c03d090d09c4
https://doi.org/10.1117/12.848025
https://doi.org/10.1117/12.848025
Publikováno v:
Journal of Applied Physics. 68:6472-6479
A new empirical method for determining proximity parameters in electron‐beam lithography is introduced on the assumption that the proximity function is composed of two Gaussians. This method is based on the clearance of resist after development in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b581a64b3d5119ffcc97bf4f9eee5358
https://doi.org/10.1063/1.346846
https://doi.org/10.1063/1.346846
Autor:
Hisashi Watanabe, Masaru Sasago, Shigeo Irie, Geert Vandenberghe, Vincent Wiaux, Takahiro Matsuo, Takashi Yuito, Akio Misaka, Lieve Van Look
Publikováno v:
Optical Microlithography XVIII.
We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply a new mask blank on Mask Enhancer in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798d8ed0ab09cbd807c93d4f0f9066a0
https://doi.org/10.1117/12.598977
https://doi.org/10.1117/12.598977
Autor:
L. Van Look, T. Yuito, Akio Misaka, Masayuki Endo, Takahiro Matsuo, Geert Vandenberghe, Masaru Sasago, Vincent Wiaux, Shigeo Irie
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
We achieve the contact layer printing of 0.249/spl mu/m/sup 2/ SRAM by using mask enhancer (ME) technology and 0.85NA ArF immersion tool. In conclusion, we strongly propose that ME is one of the most effective solutions to perform 45nm-node contact p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::864a7425310809cb08e3507524b9676b
https://doi.org/10.1109/imnc.2005.203714
https://doi.org/10.1109/imnc.2005.203714