Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Akinwumi A. Amusan"'
Publikováno v:
2022 5th Information Technology for Education and Development (ITED).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee65158886459d94ead90b1426f9af3d
https://doi.org/10.1109/ited56637.2022.10051357
https://doi.org/10.1109/ited56637.2022.10051357
Autor:
Iniubong Essien Nkanga, Olugbenga Kayode Ogidan, Akinwumi A. Amusan, Kehinde Olusesan Temikotan
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1088:012070
Irrigation is very vital to food security but deployment of effective irrigation requires solar energy especially in the rural areas with no grid power. In this work, the optimal power required in the solar photovoltaic (PV) and the battery of a sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468b6ac00417b5d9941aa3b7b0056268
https://doi.org/10.1088/1757-899x/1088/1/012070
https://doi.org/10.1088/1757-899x/1088/1/012070
Wavelength division multiplex (WDM) system with on / off keying (OOK) modulation and direct detection (DD) is generally simple to implement, less expensive and energy efficient. The determination of the possible design capacity limit, in terms of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e1edfad28b571e27e97fc5aa654167f
Publikováno v:
physica status solidi c. 11:41-45
The advanced silicon semiconductor technology requires doping methods for production of ultra-shallow junctions with sufficiently low sheet resistance. Furthermore, advanced 3-dimensional topologies may require controlled local doping that cannot be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d8efe3ee80b21f553c48eb4e2f3d1b
https://doi.org/10.1002/pssc.201300185
https://doi.org/10.1002/pssc.201300185
Publikováno v:
Microelectronic Engineering. 109:113-116
Display Omitted The application of ALD for fabrication of dopant source layers for Si is proposed.Antimony oxide deposition by ALD from triethylantimony and ozone was proven.Antimony diffusion into silicon from such layers failed.Boron containing lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3c6eb296ab8850f33793402d29a556
https://doi.org/10.1016/j.mee.2013.03.073
https://doi.org/10.1016/j.mee.2013.03.073
Autor:
Akinwumi A. Amusan, Hassan Gargouri, Edmund P. Burte, Cay Pinnow, Klauss Wandel, Bodo Kalkofen, Marco Lisker
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:01A126
Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d79e8c36012e60f7361363b1246450
https://doi.org/10.1116/1.4936221
https://doi.org/10.1116/1.4936221
Autor:
Hassan Gargouri, Bernd Garke, Marco Lisker, Bodo Kalkofen, Muhammad S. K. Bukhari, Akinwumi A. Amusan, Edmund P. Burte
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:031512
Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1beb0249c43614cb5f727603894e42b
https://doi.org/10.1116/1.4917552
https://doi.org/10.1116/1.4917552