Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Akintunde I. Akinwande"'
Autor:
Robert Hay, Ranajoy Bhattacharya, Winston Chern, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning
Publikováno v:
Applied Sciences, Vol 13, Iss 23, p 12807 (2023)
Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated
Externí odkaz:
https://doaj.org/article/d29568243fd34db68d5d2144d1d41fd0
Autor:
Pao-Chuan Shih, Girish Rughoobur, Zachary Engel, Habib Ahmad, William Alan Doolittle, Akintunde I. Akinwande, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 43:1351-1354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba4686180e1cb90f37ef49afcda2dc
https://doi.org/10.1109/led.2022.3184996
https://doi.org/10.1109/led.2022.3184996
Publikováno v:
IEEE Electron Device Letters. 42:422-425
Field emitters are attracting much attention recently because of their potential for high-frequency and harsh-environment applications. Although silicon is the most studied semiconductor for field emitters, III-Nitrides are also very promising thanks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad98a19848ba2e72bb1506f2815d9af
https://doi.org/10.1109/led.2021.3052715
https://doi.org/10.1109/led.2021.3052715
Autor:
Prashant Patil, Stephen L. Buchwald, Akintunde I. Akinwande, Zhaohong Lu, Neil Gershenfeld, Girish Rughoobur, Klavs F. Jensen, Yiming Mo
Publikováno v:
Science. 368:1352-1357
Cutting it close for radical coupling In principle, electrochemistry is an ideal method for radical coupling: One precursor oxidized at the anode pairs up with a counterpart that has been reduced at the cathode. The trouble is that either or both cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c7910887d938a0376ea5f8c3f3d229
https://doi.org/10.1126/science.aba3823
https://doi.org/10.1126/science.aba3823
Autor:
Isaac Wolstenholme, Akintunde I. Akinwande, Adam M. Darr, Ranajoy Bhattacharya, Mason Cannon, Andong Yue, Winston Chern, Jim Browning, Nedeljko Karaulac, Rushmita Bhattacharjee, Liz Gaffney, Girish Rughoobur, Gerardo Herrera, John McClarin, Allen L. Garner
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
High power magnetrons and crossed-field amplifiers (CFA) are advantageous in terms of power density and efficiency. However, electron beam stability in the crossed-field gap in terms of magnetic field tilt 1 , current density, and AC modulation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0170e7682b11efdfabc06dce8d207531
https://doi.org/10.1109/icops36761.2021.9588644
https://doi.org/10.1109/icops36761.2021.9588644
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
We present a layout-independent fabrication process for silicon field emitter arrays (FEAs) that improves the scalability of emission current with array size. Using this process, we were able to fabricate and measure FEAs with different array sizes r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cf70f1ce356f6200c1c1104a59119c
https://doi.org/10.1109/ivnc52431.2021.9600743
https://doi.org/10.1109/ivnc52431.2021.9600743
Autor:
Akintunde I. Akinwande, Jim Browning, Winston Chern, Ranajoy Bhattacharya, Girish Rughoobur, Nedeljko Karaulac, Mason Cannon, Rushmita Bhattacharjee
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b00c2db40c928dad4d5deed32c35f0
https://doi.org/10.1109/ivnc52431.2021.9600707
https://doi.org/10.1109/ivnc52431.2021.9600707
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
We present the emission characteristics from a single Si emitter with integrated nanowire, obtained at different pressures by the influx of gases. This is enabled by a nanopositioning stage and a sharp tungsten anode. We compared emission characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94837305414378e1879f90891b55943
https://doi.org/10.1109/ivnc52431.2021.9600735
https://doi.org/10.1109/ivnc52431.2021.9600735
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
We demonstrate the lifetime and breakdown mechanisms in dense (1012 m−2) self-aligned double-gated Si field emitter arrays. We perform measurements at relatively low currents of 10 nA for over 300 hrs but found that increasing the current to 50 nA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331da2682a273dcfaf2fb2ad08279819
https://doi.org/10.1109/ivnc52431.2021.9600753
https://doi.org/10.1109/ivnc52431.2021.9600753
Autor:
Nedeljko Karaulac, Akintunde I. Akinwande, Winston Chern, Girish Rughoobur, Ranajoy Bhattacharya, Mason Canon, Jim Browning
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25281126aa927946d877aa31b1aba4d5
https://doi.org/10.1109/ivnc52431.2021.9600783
https://doi.org/10.1109/ivnc52431.2021.9600783