Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Akinori Kishi"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 168-173 (2014)
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistanc
Externí odkaz:
https://doaj.org/article/808b7c4fcacf46a397f37430d7e1f572
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 168-173 (2014)
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2695481f7225327c78a97fe382b8a48
https://doi.org/10.1109/jeds.2014.2346395
https://doi.org/10.1109/jeds.2014.2346395
Publikováno v:
Science of Advanced Materials. 6:1645-1649
To achieve thermally-stable Schottky electrode on gallium nitride (GaN) electron devices for gate-first process and high-temperature devices, Titanium nitride (TiN) film was synthesised by magnetron reactive sputtering as the Schottky contact on n-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae252267f1a5784723a3470f5c3d2820
https://doi.org/10.1166/sam.2014.1936
https://doi.org/10.1166/sam.2014.1936
Autor:
Q. Liu, L. Li, Takayuki Shiraishi, Jin-Ping Ao, Yasuo Ohno, Kazuhito Fukui, Akinori Kishi, Y. Itai
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee29a9c27cbae44f36e374a4b20a0375
https://doi.org/10.7567/ssdm.2013.j-6-4
https://doi.org/10.7567/ssdm.2013.j-6-4
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:02B116
This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e84c9b96a745f8f52648d99395cd17e
https://doi.org/10.1116/1.4862084
https://doi.org/10.1116/1.4862084
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Mar/Apr2014, Vol. 32 Issue 2, p1-6, 6p
Autor:
Akira Maeda, Saburo Nabeshima, Hideo Nishishita, Koichi Kitajima, Binzen Lee, Takakazu Naito, Shiro Sato, Hiroshi Sunami, Yaszo Ono, Atsumu Okuhashi, Hideo Sakakibara, Masaaki Ugaki, Akinori Kishi, Masanori Honda
Publikováno v:
Okayama Igakkai Zasshi (Journal of Okayama Medical Association). 71:2247-2260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef12c90e43d4c02329a1a4bccd8419a
https://doi.org/10.4044/joma1947.71.5-1_2247
https://doi.org/10.4044/joma1947.71.5-1_2247