Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Akinola D, Oyedele"'
Autor:
Weijun Luo, Akinola D. Oyedele, Nannan Mao, Alexander Puretzky, Kai Xiao, Liangbo Liang, Xi Ling
Publikováno v:
ACS Physical Chemistry Au. 2:482-489
Autor:
Tianli Feng, Matthew F. Chisholm, David Mandrus, Sokrates T. Pantelides, Raymond R. Unocic, Kai Xiao, Yiyi Gu, Harry M. Meyer, Shize Yang, Akinola D. Oyedele, Dayrl P. Briggs, David B. Geohegan, Christopher M. Rouleau, Amanda Haglund, Alexander A. Puretzky
Publikováno v:
Journal of the American Chemical Society. 141:8928-8936
The failure to achieve stable Ohmic contacts in two-dimensional material devices currently limits their promised performance and integration. Here we demonstrate that a phase transformation in a re...
Autor:
Giang D, Nguyen, Akinola D, Oyedele, Amanda, Haglund, Wonhee, Ko, Liangbo, Liang, Alexander A, Puretzky, David, Mandrus, Kai, Xiao, An-Ping, Li
Publikováno v:
ACS nano. 14(2)
We report atomically precise pentagonal PdSe
Autor:
Anna N. Hoffman, Philip D. Rack, Akinola D. Oyedele, Michael R. Koehler, Bobby G. Sumpter, Michael G. Stanford, Liangbo Liang, Ilia N. Ivanov, Cheng Zhang, Stephen McDonnell, David Mandrus, Kai Xiao, Maria Gabriela Sales
Publikováno v:
ACS Applied Materials & Interfaces. 10:36540-36548
Atmospheric and long-term aging effects on electrical properties of WSe2 transistors with various thicknesses are examined. Although countless published studies report electrical properties of transition-metal dichalcogenide materials, many are not a
Autor:
David B. Geohegan, Matthew Z. Bellus, Xufan Li, Alexander A. Puretzky, Masoud Mahjouri-Samani, Hui Zhao, Kai Xiao, Samuel D. Lane, Akinola D. Oyedele
Publikováno v:
ACS Nano. 12:7086-7092
In-plane heterojuctions formed from two monolayer semiconductors represent the finest control of electrons in condensed matter and have attracted significant interest. Various device studies have shown the effectiveness of such structures to control
Autor:
Cheng Zhang, Kai Xiao, Olga S. Ovchinnikova, Anthony T. Wong, Liubin Xu, Thomas Z. Ward, Pushpa Raj Pudasaini, Anton V. Ievlev, Joo Hyon Noh, David Mandrus, Amanda Haglund, Haixuan Xu, Akinola D. Oyedele, Philip D. Rack
Publikováno v:
ACS Applied Materials & Interfaces. 10:22623-22631
The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of mate
Publikováno v:
Carbon. 131:246-257
The unique properties of graphene have made it a promising material for integration in future electronic applications. The idealized surface of graphene, atomically-flat and without dangling bonds, offers the opportunity to understand the assembly of
Autor:
David J. Keffer, David P. Harper, Akinola D. Oyedele, Eduardo Ponce, Valerie Garcia-Negron, Orlando Rios
Publikováno v:
Journal of Applied Crystallography. 51:76-86
Composite materials possessing both crystalline and amorphous domains, when subjected to X-ray and neutron scattering, generate diffraction patterns that are often difficult to interpret. One approach is to perform atomistic simulations of a proposed
Autor:
Shize Yang, Bobby G. Sumpter, Liangbo Liang, Akinola D. Oyedele, Peng Yu, Kai Wang, Christopher M. Rouleau, David B. Geohegan, Avik W. Ghosh, Philip D. Rack, Jingjie Zhang, Kai Xiao, Matthew F. Chisholm, Wu Zhou, Zheng Liu, Alexander A. Puretzky, Pushpa Raj Pudasaini
Publikováno v:
Journal of the American Chemical Society. 139:14090-14097
Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this wo
Autor:
Thomas Z. Ward, Pushpa Raj Pudasaini, Gerd Duscher, David Mandrus, Kai Xiao, Anna N. Hoffman, Philip D. Rack, Akinola D. Oyedele, Anthony T. Wong, Cheng Zhang, Nicholas Cross, Michael G. Stanford
Publikováno v:
Nano Research. 11:722-730
In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET device