Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Akinobu Yoshida"'
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid thes
Externí odkaz:
https://doaj.org/article/d346599b59ba4a959488ae84dff69128
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125304-125304-5 (2017)
Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-
Externí odkaz:
https://doaj.org/article/e4c759cf490a4acb8872436ecec0e860
Publikováno v:
ACS Photonics. 6:260-264
We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (∼1.55 μm). The vertical NWs were directly grown on Si by selective-area growth. Implementation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::507694ced40fec82bbf903d401bc783a
https://doi.org/10.1021/acsphotonics.8b01089
https://doi.org/10.1021/acsphotonics.8b01089
Publikováno v:
Journal of Crystal Growth. 506:135-139
We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by implementing As surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c8c700a5a8b0169ce03529bf1611c4
https://doi.org/10.1016/j.jcrysgro.2018.10.009
https://doi.org/10.1016/j.jcrysgro.2018.10.009
Publikováno v:
Journal of Crystal Growth. 464:75-79
We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff4a88329872b79c622de3d4561fc06
https://doi.org/10.1016/j.jcrysgro.2016.10.083
https://doi.org/10.1016/j.jcrysgro.2016.10.083
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Tunnel field-effect transistor (TFET) is promising millivolt switch for future logic applications. However, the steepness of the subthreshold slope (SS), that defines the power consumption, and low conductance are still challenges due to lack of mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05805ab97d6dac865c2e75706c8bb7c5
https://doi.org/10.1109/iciprm.2019.8819290
https://doi.org/10.1109/iciprm.2019.8819290
Publikováno v:
The Proceedings of the Transportation and Logistics Conference. :241-244
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8387021c26c27b0924fc396cf2465c
https://doi.org/10.1299/jsmetld.2014.23.241
https://doi.org/10.1299/jsmetld.2014.23.241
Publikováno v:
The Proceedings of the Transportation and Logistics Conference. :271-274
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f828f32cf99e3a120975755c26d6e0a0
https://doi.org/10.1299/jsmetld.2013.22.271
https://doi.org/10.1299/jsmetld.2013.22.271
Autor:
Akinobu Yoshida
Publikováno v:
The Proceedings of the National Symposium on Power and Energy Systems. :A132
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5681ccd6c6e8a2e8be8fe82916dd7ff0
https://doi.org/10.1299/jsmepes.2018.23.a132
https://doi.org/10.1299/jsmepes.2018.23.a132
Publikováno v:
ACS Photonics; 2/20/2019, Vol. 6 Issue 2, p260-264, 5p