Zobrazeno 1 - 10
of 407
pro vyhledávání: '"Akinobu Teramoto"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:232-239
A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high resistance (HR) measurement typemeasures
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Nobutaka Mizutani, Tomoyuki Suwa, Takenobu Matsuo, Yasuyuki Shirai
Publikováno v:
ECS Transactions. 97:23-29
The Si(110) surface appears at the sidewall of 3D transistors such as FinFET [1,2]. The surface micro-roughness of Si(110) strongly affects to the device characteristics because the Si(110) sidewall surface have a higher proportion of channel region
Autor:
Yoshiteru Amemiya, Junichi Tsuchimoto, Hiroyuki Hosoya, Hiroki Nakanishi, Chihiro Watanabe, Akinobu Teramoto
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1036
For high-performance magnetic tunnel junction devices, the ion beam etching (IBE) process is improved by including the fabrication of a SiN sidewall around the MgO tunnel barrier layer. This sidewall prevents the redeposition from lower metal layers
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062205
The erosion rate of sintered Y2O3 and yttrium oxyfluoride (Y-O-F) due to Ar ion bombardment was investigated for use in the plasma process chamber. The Ar ion bombardment was performed by irradiations of Ar plasma and Ar ion beam. In addition, charge
Autor:
Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa
Publikováno v:
Journal of Vacuum Science & Technology A. 40:053201
In this study, we investigated the adsorption and surface reaction of isopropyl alcohol (IPA) gas on silicon dioxide (SiO2) surfaces. The temperature dependence of the decomposition behavior of IPA and the effect on the SiO2 surface, such as reductio
Autor:
Shigetoshi Sugawa, Rihito Kuroda, Akira Shimizu, Katsutoshi Ishii, Yoshinobu Shiba, Akinobu Teramoto, Tomoyuki Suwa, Kota Umezawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P715-P718
Autor:
Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shinya Ichino, Shigetoshi Sugawa, Takezo Mawaki
Publikováno v:
IEEE Electron Device Letters. 39:1836-1839
Threshold voltage variation is considered to be caused by various factors, such as random dopant fluctuation, surface roughness, metal gate granularity, and so on. Its magnitude ( $\sigma {V}_{\mathrm {th}}$ ) is proportional to the reciprocal of the
Publikováno v:
IEEE Transactions on Electron Devices. 65:1932-1938
Critically important for electronic biosensing is to reduce detection time that is necessary to sense the capture of biomolecules. The essential factors to study the detection time are the number of captured biomolecules per unit time and the sensiti
Publikováno v:
ITE Transactions on Media Technology and Applications. 6:171-179
Autor:
Shinya Ichino, Shunichi Wakashima, Shigetoshi Sugawa, Takezo Mawaki, Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto
Publikováno v:
ITE Transactions on Media Technology and Applications. 6:163-170