Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Akinobu Kanda"'
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3419c8d8a620496a5c0282a727aff55e
Publikováno v:
Applied Physics Express. 13:075006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d44e10bbb5f52e7d91de84c85e77a24
https://doi.org/10.35848/1882-0786/ab9d0e
https://doi.org/10.35848/1882-0786/ab9d0e
This article describes novel superconducting states in nanoscale superconductors. It first considers characteristic lengths in superconductors and vortices in mesoscopic superconductors before discussing trends in superconductivity research, which is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81cc1703b5144a29a2e2044b4f5d7109
https://doi.org/10.1093/oxfordhb/9780199533046.013.19
https://doi.org/10.1093/oxfordhb/9780199533046.013.19
A graphene sheet partially covered with a bulk superconductor serves as a normal conductor--superconductor (NS) junction, in which electron transport is mainly governed by Andreev reflection (AR). As excess carriers induced over the covered region pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::119b527812394e52953da8f07d72645e
http://arxiv.org/abs/1706.03457
http://arxiv.org/abs/1706.03457
Publikováno v:
Journal of Physics: Conference Series. 1293:012005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::049ee6271ed7cfb28c4cd1bbc0ac0eaf
https://doi.org/10.1088/1742-6596/1293/1/012005
https://doi.org/10.1088/1742-6596/1293/1/012005
Publikováno v:
Journal of Physics: Conference Series. 1293:012006
We have experimentally studied the influence of the focused ion beam (FIB) microfabrication on the superconducting properties of exfoliated thin films of layered superconductor NbSe2 through transport measurement. We observed significant decrease of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89040ba3cf6817ac141fd481322e96e9
https://doi.org/10.1088/1742-6596/1293/1/012006
https://doi.org/10.1088/1742-6596/1293/1/012006
Publikováno v:
Journal of Physics: Conference Series. 1293:012016
We have experimentally studied response of a superconductor NbSe2 flake to perpendicular magnetic fields using small tunnel junctions. The NbSe2 film (lateral size ∼ several μm, thickness ∼ 50 nm) was obtained using the mechanical exfoliation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6f822301cdb3e0cd301fdb88bca594
https://doi.org/10.1088/1742-6596/1293/1/012016
https://doi.org/10.1088/1742-6596/1293/1/012016
Publikováno v:
physica status solidi c. 10:1628-1631
We report the surface morphology of multilayer graphene synthesized directly on a SiO2/Si substrate through graphitization of amorphous carbon with Ni catalyst. We demonstrate that the disorder-induced Raman D peak is effectively suppressed when the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5e03bcdf05e073cad793d079fa009b
https://doi.org/10.1002/pssc.201300285
https://doi.org/10.1002/pssc.201300285
Autor:
Takashi Taniguchi, Akinobu Kanda, Rineka Hiraide, Youiti Ootuka, Hikari Tomori, Kenji Watanabe
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Strain engineering is a promising method for controlling electron transport in graphene. From our previous experimental result, we found that the observation of gap formation by lattice strain requires large spatial variation of strain and long mean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e257b434c5952dc088c799fe995e4d8f
https://doi.org/10.1109/iciprm.2016.7528702
https://doi.org/10.1109/iciprm.2016.7528702
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Effect of metal contact on the transfer characteristics in graphene field effect devices is studied for several metal species. We find that two Dirac points appear in the transfer characteristics: one corresponding to the graphene portion underneath/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d9ed17409a6fa5abd54c848d21a19a
https://doi.org/10.1109/iciprm.2016.7528503
https://doi.org/10.1109/iciprm.2016.7528503