Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Akiko Gomyo"'
Autor:
Keishi Ohashi, Seiichi Itabashi, Hiroaki Yukawa, Masayuki Mizuno, Masafumi Nakada, T. Watanabe, M. Kinoshita, N. Suzuki, Jun Akedo, T. Ueno, Kenichi Nishi, Koji Yamada, Tai Tsuchizawa, Koichi Nose, Daisuke Okamoto, S. Torii, T. Shimizu, Akiko Gomyo, Junichi Fujikata, K. Furue, Tsutomu Ishi, Jun Ushida
Publikováno v:
Proceedings of the IEEE. 97:1186-1198
We describe a cost-effective and low-power-consumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an Si-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2786acdf398b1ee377e0ffc53c3329f5
https://doi.org/10.1109/jproc.2009.2020331
https://doi.org/10.1109/jproc.2009.2020331
Autor:
Keishi Ohashi, Hiroshi Fukuda, Kenichi Nishi, Jun Ushida, Akiko Gomyo, Toshifumi Watanabe, Junichi Fujikata, Daisuke Okamoto, Seiichi Itabashi, Koji Yamada, Tai Tsuchizawa
Publikováno v:
Japanese Journal of Applied Physics. 47:6739-6743
We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a6531ada8211d8f72ca58d29283d93
https://doi.org/10.1143/jjap.47.6739
https://doi.org/10.1143/jjap.47.6739
Autor:
Koji Yamada, Kenichi Nishi, Tai Tchuchizawa, Keishi Ohashi, Masayuki Mizuno, Koichi Nose, Daisuke Okamoto, Hiroaki Yukawa, Akiko Gomyo, Masao Kinoshita, Jun Ushida, Masafumi Nakada, Tsutomu Ishi, Toshifumi Watanabe, Junichi Fujikata, Takanori Shimizu, Seiichi Itabashi
Publikováno v:
IEICE Transactions on Electronics. :131-137
LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7679043a7840fee0e85a7efe07b35b69
https://doi.org/10.1093/ietele/e91-c.2.131
https://doi.org/10.1093/ietele/e91-c.2.131
Publikováno v:
IEICE Transactions on Electronics. :65-71
We report on a channel drop filter with a mode gap in the propagating mode of a photonic crystal slab that was fabricated on silicon on an insulator wafer. The results, simulated with the 3-dimensional finite-difference time-domain and plane-wave met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0275ec613ba4db446566980517aa2030
https://doi.org/10.1093/ietele/e90-c.1.65
https://doi.org/10.1093/ietele/e90-c.1.65
Publikováno v:
Thin Solid Films. 508:422-425
Channel-drop filters (CDFs) with photonic crystal slabs–connected between silicon channel waveguides and fabricated on an SOI wafer–were designed and fabricated and these demonstrated wavelength division demultiplexing. Results simulated with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1800c1666adf6d2a66e4a23ae3fdac
https://doi.org/10.1016/j.tsf.2005.06.113
https://doi.org/10.1016/j.tsf.2005.06.113
Autor:
Satomi Ishida, Akiko Gomyo, Hiroyuki Fujita, Masatoshi Tokushima, Hiroshi Toshiyoshi, Satoshi Iwamoto, Hirohito Yamada, Akio Higo, Yasuhiko Arakawa
Publikováno v:
IEICE Electronics Express. 3:39-43
We propose a high-yield fabrication processing technique for the MEMS (micro electro mechanical system) modulators integrated with two-dimensional photonic crystal waveguides. Polysilicon microactuators for evanescent modulation was successfully deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f66721afb651d47fd5b4a5845660cf
https://doi.org/10.1587/elex.3.39
https://doi.org/10.1587/elex.3.39
Publikováno v:
Applied Surface Science. 241:9-13
Atomic arrangements in a triple-period (TP)-A type ordered AlInAs layer were investigated by a cross-sectional scanning tunneling microscope (XSTM) for the first time. The distributions of cation atoms in the ordered layer were distinguished using th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572ab864079780122adfe6c3dc04de1c
https://doi.org/10.1016/j.apsusc.2004.09.009
https://doi.org/10.1016/j.apsusc.2004.09.009
Publikováno v:
Hyomen Kagaku. 20:2-8
The effects of step bunching on a CuPt-B ordered structure in Ga0.5In0.5P grown on (11n) B and (11n) A (n=8, 13) GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) are described. In the GaInP layers, a CuPt-B ordered structure in the [111] B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9297d3603cba086ea3d9a2a393aefb9
https://doi.org/10.1380/jsssj.20.2
https://doi.org/10.1380/jsssj.20.2
Publikováno v:
Journal of Crystal Growth. :47-49
Using an ultra-high-vacuum cross-sectional scanning tunneling microscope (XSTM), we observed the atomic arrangement of a double period (CuPt)-B-type ordered GaAsSb layer grown on (001) InP by molecular beam epitaxy (MBE). XSTM images of the ordered G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e699056bff3ffadd7e014ebcc980ee
https://doi.org/10.1016/j.jcrysgro.2006.11.125
https://doi.org/10.1016/j.jcrysgro.2006.11.125
Autor:
Shunsuke Ohkouchi, Akiko Gomyo
Publikováno v:
Applied Surface Science. :447-451
The surface structure of a triple period (TP)-A type ordered GaInAs layer grown on InP substrates was observed for the first time by a scanning tunneling microscopy (STM) system equipped with a molecular beam epitaxy (MBE) facility. The STM image of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624ff063d814613f925d0350ac93644a
https://doi.org/10.1016/s0169-4332(98)00099-3
https://doi.org/10.1016/s0169-4332(98)00099-3