Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Akihito Tsushi"'
Publikováno v:
Sen'i Gakkaishi. 54:P409-P412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::611fbb69541860a62b9024c1c5a5acdd
https://doi.org/10.2115/fiber.54.11_p409
https://doi.org/10.2115/fiber.54.11_p409
Publikováno v:
Japanese Journal of Applied Physics. 32:3770
The state of Zn diffusion on the heterointerface of 660 nm AlGaAs double-hetero (DH) light-emitting diodes (LEDs) was investigated by the electron-beam-induced current (EBIC) method. The p-n junction penetrates toward the n-cladding layer as a result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccadbe29f215d1812d0107b31d784555
https://doi.org/10.1143/jjap.32.3770
https://doi.org/10.1143/jjap.32.3770
Autor:
Masahiko Kondo, Akihito Tsushi, Taneo Nishino, Sho Shirakata, Yoshihiro Hamakawa, Tetsuya Kariya
Publikováno v:
Japanese Journal of Applied Physics. 24:524
In1-x Ga x P0.96As0.04 LPE layers were grown on (100) GaAs substrates from a two-phase solution with an excess GaP source at 785°C and 795°C. The relations between the liquid compositions of Ga and P, X Ga l and X P l, at 800°C, were obtained expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::494cf545d01edfedbde0b4b5407670a2
https://doi.org/10.1143/jjap.24.524
https://doi.org/10.1143/jjap.24.524
Publikováno v:
Japanese Journal of Applied Physics. 24:806
The growth conditions have been studied in detail for InGaPAs LPE layers grown on (100) GaAs substrates using the two-phase melt technique. The accurate liquidus isotherms and iso-concentration curves have been obtained experimentally and are compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cabb78a9ac3d2ff714e4ee5b023fb1c
https://doi.org/10.1143/jjap.24.806
https://doi.org/10.1143/jjap.24.806
Autor:
Yoneda, Muneo, Nakamura, Yukiyo, Akihito Tsushi, Akihito Tsushi, Kiyoshi Ichimura, Kiyoshi Ichimura
Publikováno v:
Japanese Journal of Applied Physics; September 1993, Vol. 32 Issue: 9 p3770-3770, 1p