Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Akihisa Terano"'
Publikováno v:
Materials Science in Semiconductor Processing. 70:92-98
In this study, we used scanning internal photoemission microscopy (SIPM) to investigate damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) etching in conjunction with a recovery process by annealing. We formed Pd Schott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de1754482d6e870d1b5151a7cdc7f2c
https://doi.org/10.1016/j.mssp.2016.10.027
https://doi.org/10.1016/j.mssp.2016.10.027
Publikováno v:
IEEE Transactions on Electron Devices. 61:3411-3416
We have investigated the possibility of being able to create gallium nitride bipolar junction transistors (GaN BJTs) whose n-type emitter region is formed using a conventional Si-ion implantation technology. The thermal stability of the p-GaN layer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a9ae6c56ff58c77d3c9a18964041d7d
https://doi.org/10.1109/ted.2014.2346778
https://doi.org/10.1109/ted.2014.2346778
Autor:
Kazuki Nomoto, Akihisa Terano, Naoki Kaneda, Tomoyoshi Mishima, Shigehisa Tanaka, Yoshitomo Hatakeyama, Tadayoshi Tsuchiya, Tohru Nakamura, Tomonobu Tsuchiya, Kazuhiro Mochizuki, Hiroyuki Uchiyama, Yuya Ishida
Publikováno v:
Materials Science Forum. :1189-1192
An effective acceptor level (EAeff) for representing the increased ionization ratio in extrinsically photon-recycled p-type GaN is proposed.EAeffat 300 K in the range of 0.1360.145 eV is found to reproduce current/voltage characteristics of transmiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ae1a31a2a581484c0164ed1549e09fc
https://doi.org/10.4028/www.scientific.net/msf.778-780.1189
https://doi.org/10.4028/www.scientific.net/msf.778-780.1189
Autor:
Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose, Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya, Tohru Nakamura
Publikováno v:
IEEE Transactions on Electron Devices. 59:1091-1098
The influence of surface recombination on forward current-voltage (IF-VF) characteristics of gallium nitride (GaN) p+n diodes formed on GaN free-standing substrates was both experimentally and computationally investigated. In the temperature range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4eee4d1c5e9b02448f74972fc49d6cb
https://doi.org/10.1109/ted.2012.2185241
https://doi.org/10.1109/ted.2012.2185241
Autor:
Hiroyuki Uchiyama, R. Mita, T. Kikawa, Takafumi Taniguchi, H. Ohta, Kazuhiro Mochizuki, K. Tanaka, Akihisa Terano
Publikováno v:
IEEE Transactions on Electron Devices. 52:2144-2149
To characterize and model the degradation of collector-up (C-up) heterojunction bipolar transistors (HBTs), we bias stress InGaP/GaAs C-up tunneling-collector HBTs (TC-HBTs) fabricated under various conditions for etching the collector mesas and of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab715046271ed7ca7812b8ba1f097f1f
https://doi.org/10.1109/ted.2005.856800
https://doi.org/10.1109/ted.2005.856800
Publikováno v:
IEEE Transactions on Electron Devices. 45:1176-1182
Highly efficient enhance/depletion (E/D) dual-gate HEMT's for use in high-power linear amplifiers with a single biasing supply are demonstrated. These devices include platinum buried gates to realize a single biasing supply. A double-heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6781c70638cbebb79e85afec99b194
https://doi.org/10.1109/16.678503
https://doi.org/10.1109/16.678503
Autor:
Teruo Mozume, Hiroshi Masuda, Akihisa Terano, Michael W. Pierce, T. Oka, Kazuhiko Hosomi, Kiyoshi Ouchi, Tomonori Tanoue
Publikováno v:
Microwave and Optical Technology Letters. 11:159-163
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd1cc40f9acbfd33deb6c8a527f53907
https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<159::aid-mop13>3.0.co
https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<159::aid-mop13>3.0.co
Autor:
Jun Gotoh, Masayuki Momose, Akihisa Terano, A. Taike, Kazuhiro Mochizuki, Shinichi Nakatsuka, Masahiko Kawata
Publikováno v:
Journal of Applied Physics. 78:3216-3220
The crystallographic microstructure and electrical characteristics of Au/Pt/Ti/Ni ohmic contacts on p‐type (001) ZnTe layers are investigated as a function of annealing temperature, by using the transmission line model method, cross‐sectional tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bd6de541239aefff2484902f5b47800
https://doi.org/10.1063/1.360010
https://doi.org/10.1063/1.360010
Publikováno v:
Japanese Journal of Applied Physics. 55:05FE05
To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ff2517942c6c35bb1631550c4eb757
https://doi.org/10.7567/jjap.55.05fe05
https://doi.org/10.7567/jjap.55.05fe05
Publikováno v:
Japanese Journal of Applied Physics. 54:066503
We investigated the achievability of low specific on-resistance and high breakdown voltage by GaN diodes consisting of three, five, and eight two-dimensional-electron-gas (2DEG) channels. The anode Schottky electrode and cathode Ohmic electrode were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99197a84726fd0264656243d5de1adfc
https://doi.org/10.7567/jjap.54.066503
https://doi.org/10.7567/jjap.54.066503