Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Akihiro Yauchi"'
Publikováno v:
Materials Science Forum. :191-194
We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a30addc14d87c80c6377d34c2b8bf7e
https://doi.org/10.4028/www.scientific.net/msf.600-603.191
https://doi.org/10.4028/www.scientific.net/msf.600-603.191
Publikováno v:
Materials Science Forum. :187-190
Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dfd84d67483641d13d1de614542831d
https://doi.org/10.4028/www.scientific.net/msf.600-603.187
https://doi.org/10.4028/www.scientific.net/msf.600-603.187
Publikováno v:
Materials Science Forum. :303-306
We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b07c82905bc5681803158e558d7fa1c3
https://doi.org/10.4028/www.scientific.net/msf.556-557.303
https://doi.org/10.4028/www.scientific.net/msf.556-557.303
Publikováno v:
physica status solidi c. 4:2227-2230
We have grown AlN single crystal on 6H-SiC substrate using Al-Cu solution of 1500-1600 °C. Nitrogen is supplied from gas phase under atmospheric pressure and the cold crucible technique is applied. Thickness of AlN reached 40 μm with the growth rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6928a2204f4f87a317452e8ab7dec15c
https://doi.org/10.1002/pssc.200674727
https://doi.org/10.1002/pssc.200674727
Autor:
Nobuyoshi Yashiro, Kazuhito Kamei, Nobuhiro Okada, Toru Ujihara, Akihiro Yauchi, Kazuhiko Kusunoki, Kazuo Nakajima
Publikováno v:
Materials Science Forum. :119-122
We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfdd47bad91b9a9012a1f1187d31652
https://doi.org/10.4028/www.scientific.net/msf.527-529.119
https://doi.org/10.4028/www.scientific.net/msf.527-529.119
Publikováno v:
Journal of Materials Science. 32:119-122
Nitrogen absorption is usually observed during batch-type hot-band annealing of electrical steel sheets containing aluminium. This nitrogenizing causes the deterioration of magnetic properties, such as core loss and induction. In order to prevent nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53d11c2c6da2b0d3e063d2442b486ac
https://doi.org/10.1023/a:1018531300749
https://doi.org/10.1023/a:1018531300749
Publikováno v:
Journal of the Japan Society of Colour Material. 64:780-786
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d4fc90070c8bc449148227ed09ce49
https://doi.org/10.4011/shikizai1937.64.780
https://doi.org/10.4011/shikizai1937.64.780
Publikováno v:
Materia Japan. 35:713-715
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d283f52197b9aca0d15a961e364dfb28
https://doi.org/10.2320/materia.35.713
https://doi.org/10.2320/materia.35.713
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