Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Akihiro Yahata"'
Publikováno v:
Materials Science Forum. :667-670
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0830b099c7c2bd25f211ed99c9be16
https://doi.org/10.4028/www.scientific.net/msf.389-393.667
https://doi.org/10.4028/www.scientific.net/msf.389-393.667
Autor:
Tsutomu Uemoto, Tatsuro Beppu, Atsushi Kamata, Akihiro Yahata, Masaki Okajima, Keijiro Hirahara, Hiroshi Mitsuhashi
Publikováno v:
Journal of Crystal Growth. 101:818-821
Lithium-doped ZnSe epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition. Tert-butyllithium (TBL) was used as a doping material. Secondary ion mass spectroscopy showed that Li concentrations in ZnSe layers coul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b09cb6b49d63a19b1dcb325622c1749
https://doi.org/10.1016/0022-0248(90)91086-6
https://doi.org/10.1016/0022-0248(90)91086-6
Publikováno v:
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
In this paper, we show the optimized device parameters for various voltage multi-RESURF devices based on exact simulation. In addition, we also present, for the first time, the exact static and transient simulation of a 4500 V multi-RESURF device. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f48d31bdb8fea3d819c6057f4da7f774
https://doi.org/10.1109/ispsd.1999.764066
https://doi.org/10.1109/ispsd.1999.764066
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
A novel method of surface recombination velocity measurement for evaluating high-voltage lateral power devices is presented. This method is based on the combination of experiment and simulation for the time decay of photoluminescence emitted from Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab29bb35ab04b3134a11be7318a0ceb
https://doi.org/10.1109/ispsd.1993.297088
https://doi.org/10.1109/ispsd.1993.297088
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
2500-V MOS assisted gate triggered thyristors (MAGTs) have been proposed as promising devices for future pulsed power applications. It was successfully demonstrated that the device has extremely high turn-on capability, comparable to thyratrons. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989680e0f9ebe6784f5b1c769196f5a4
https://doi.org/10.1109/iedm.1991.235478
https://doi.org/10.1109/iedm.1991.235478
Autor:
Akihiro Yahata, S. Eicher
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
The on-state voltage and the turn-off loss were simulated for many kinds of injection enhancement gate transistors (IEGTs) with different trench-MOS channel mobilities (/spl mu//sub eff/), trench depths and thin-out ratios. It has been found that a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87cf0c6de82e684702ff3b7cabefb2b7
https://doi.org/10.1109/ispsd.1998.702684
https://doi.org/10.1109/ispsd.1998.702684
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
We determined the optimum condition to smooth the roughness of the trench sidewall and this condition was applied to the fabrication of the injection enhancement gate transistor (IEGT). The on-state voltage was drastically decreased by smoothing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651607ec0c52a8054ed580a438f2a6c4
https://doi.org/10.1109/ispsd.1998.702686
https://doi.org/10.1109/ispsd.1998.702686
Autor:
Akio C O Patent Divis Nakagawa, Mitsuhiko Kitagawa, Tomoki Inoue, Shigeru Hasegawa, H. Takenaka, Akihiro Yahata, Kenichi Matsushita
Publikováno v:
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
In this paper, the authors report, for the first time, an exact prediction of the turn-off characteristics of 4500 V IEGTs and compare the results with those for GTOs. The prediction was made by means of device simulation and trial fabrication of IEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b55c414e6d626f995b90c9143de9aa64
https://doi.org/10.1109/ispsd.1995.515086
https://doi.org/10.1109/ispsd.1995.515086
Autor:
Akihiro Yahata, M. Atsuta
Publikováno v:
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
Leakage current of current diode was found to flow at a much lower voltage than that of avalanche breakdown under the conditions of high voltage rise rate (dV/dt) and low frequency, and this leakage current was characteristic of semi-insulating polyc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0b3635d13346b9bbdfe15725a64c3c3
https://doi.org/10.1109/ispsd.1995.515071
https://doi.org/10.1109/ispsd.1995.515071
Publikováno v:
Japanese Journal of Applied Physics. 40:116
Channel mobility (µeff) for a trench metal-oxide-semiconductor field effect transistor (MOSFET) can be significantly enhanced by smoothing the trench sidewall surface. A smoothed sample showed an increased µeff value, 520 cm2/Vs, at an effective el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9152a1ce20fe73e036a7851259278e70
https://doi.org/10.1143/jjap.40.116
https://doi.org/10.1143/jjap.40.116