Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Akihiro Ohtake"'
Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system
Autor:
Yuto Uematsu, Takafumi Ishibe, Takaaki Mano, Akihiro Ohtake, Hideki T. Miyazaki, Takeshi Kasaya, Yoshiaki Nakamura
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Toward drastic enhancement of thermoelectric power factor, quantum confinement effect proposed by Hicks and Dresselhaus has intrigued a lot of researchers. There has been much effort to increase power factor using step-like density-of-states
Externí odkaz:
https://doaj.org/article/7d35bc80d8684f3390e98d824a445465
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract We present a combined experimental and theoretical study of the Se-treated GaAs(001)-( $$2\times 1$$ 2 × 1 ) surface. The ( $$2\times 1$$ 2 × 1 ) structure with the two-fold coordinated Se atom at the outermost layer and the three-fold coo
Externí odkaz:
https://doaj.org/article/39057a5aed164765808f41bb20a0ac62
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract The structure and morphology of monolayer 2H-MoTe2 on GaAs(111)B grown by molecular-beam epitaxy have been studied using scanning tunneling microscopy, electron diffraction, and X-ray photoelectron spectroscopy. The MoTe2 film grown and anne
Externí odkaz:
https://doaj.org/article/43c60eec1af34c58b53ef6b663438ce0
Publikováno v:
ACS Omega, Vol 3, Iss 11, Pp 15592-15597 (2018)
Externí odkaz:
https://doaj.org/article/bc5d3ac53b884e1280ff58c79fb7aae2
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 443 (2021)
We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence o
Externí odkaz:
https://doaj.org/article/812ed598198c40769b91ad29763b3996
Autor:
Takaaki Mano, Kazuaki Sakoda, Akihiro Ohtake, Neul Ha, Takashi Kuroda, Yoshiki Sakuma, Takeshi Noda
Publikováno v:
Crystal Growth & Design. 21:3947-3953
Autor:
Yoshiki Sakuma, Akihiro Ohtake
Publikováno v:
The Journal of Physical Chemistry C. 125:11257-11261
Autor:
Yoshiki Sakuma, Akihiro Ohtake
Publikováno v:
The Journal of Physical Chemistry C. 124:5196-5203
Monolayer MoSe2(0001) films are epitaxially grown on the (111)B-, (110)-, and (001)-oriented GaAs substrates by molecular-beam epitaxy. We found that the lattice mismatch is not a significant facto...
Publikováno v:
ACS Omega, Vol 3, Iss 11, Pp 15592-15597 (2018)
ACS Omega
ACS Omega
We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films