Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Akihiro GORYU"'
Autor:
Rika Numano, Akihiro Goryu, Yoshihiro Kubota, Hirohito Sawahata, Shota Yamagiwa, Minako Matsuo, Tadahiro Iimura, Hajime Tei, Makoto Ishida, Takeshi Kawano
Publikováno v:
FEBS Open Bio, Vol 12, Iss 4, Pp 835-851 (2022)
Genetic modification to restore cell functions in the brain can be performed through the delivery of biomolecules in a minimally invasive manner into live neuronal cells within brain tissues. However, conventional nanoscale needles are too short (len
Externí odkaz:
https://doaj.org/article/8904ddec34774351bd08e76161145020
Autor:
Asuka HATANO, Jun SUMIYOSHITANI, Kazuma SUZUKI, Akihiro GORYU, Akira KANO, Mitsuaki KATO, Kenji HIROHATA, Satoshi IZUMI
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 84, Iss 863, Pp 18-00015-18-00015 (2018)
Transluminal attenuation gradient (TAG) is expected as a noninvasive assessment of the functional significance of a stenosis, and has reported relatively high diagnostic performance. TAG measures the gradient of intraluminal radiological attenuation
Externí odkaz:
https://doaj.org/article/00932ce311d745958ecf07bd6b62febb
Publikováno v:
Journal of Electronic Packaging. 145
The larger current densities accompanying increased output of power modules are expected to degrade solder joints by electromigration. Although previous research has experimentally studied electromigration in solder, die-attach solder joints in Si-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14ebee417aff22c64af0713fbea5b2cf
https://doi.org/10.1115/1.4055394
https://doi.org/10.1115/1.4055394
Autor:
Yusuke Kobayashi, Tatsuya Nishiwaki, Akihiro Goryu, Tsuyoshi Kachi, Ryohei Gejo, Hiro Gangi, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee420a6dae969d8925ea5c78c499481c
https://doi.org/10.1109/ispsd49238.2022.9813642
https://doi.org/10.1109/ispsd49238.2022.9813642
Autor:
Rika Numano, Akihiro Goryu, Yoshihiro Kubota, Hirohito Sawahata, Shota Yamagiwa, Minako Matsuo, Tadahiro Iimura, Hajime Tei, Makoto Ishida, Takeshi Kawano
Publikováno v:
FEBS open bio. 12(4)
Genetic modification to restore cell functions in the brain can be performed through the delivery of biomolecules in a minimally invasive manner into live neuronal cells within brain tissues. However, conventional nanoscale needles are too short (len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eabce8d9f2cc5a63a499a5a46eef5bf1
https://pubmed.ncbi.nlm.nih.gov/35293154
https://pubmed.ncbi.nlm.nih.gov/35293154
Autor:
Johji Nishio, Aoi Okada, Kenji Hirohata, Mitsuaki Kato, Akira Kano, Akihiro Goryu, Chiharu Ota
Publikováno v:
Materials Science Forum. 963:263-267
Expansion of single Shockley stacking faults (SSFs) during forward current operation is an important issue, because it decreases the reliability of 4H-SiC bipolar devices. In this paper, we propose a method for analyzing SSF dynamics based on free en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2be320591d380b7e02e440a4a1acdc
https://doi.org/10.4028/www.scientific.net/msf.963.263
https://doi.org/10.4028/www.scientific.net/msf.963.263
Autor:
Akihiro Goryu, Koji Nakayama, Chiharu Ota, Tomohisa Kato, Yoshiyuki Yonezawa, Aoi Okada, Ryosuke Iijima, Johji Nishio, Hajime Okumura
Publikováno v:
Materials Science Forum. 963:280-283
To understand the effects of temperature and injection current density on expansion of Shockley stacking faults (SSFs) from basal-plane dislocations in 4H-SiC p-i-n diodes, the threshold current density for SSF expansion was investigated at eight tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb217366e1b2b82a2de9686ea44e739
https://doi.org/10.4028/www.scientific.net/msf.963.280
https://doi.org/10.4028/www.scientific.net/msf.963.280
Autor:
Mitsuaki Kato, Chiharu Ota, Akira Kano, Akihiro Goryu, Johji Nishio, Kenji Hirohata, Aoi Okada, Satoshi Izumi
Publikováno v:
Materials Science Forum. 963:288-293
Single Shockley stacking faults (SSFs) expand from basal plane dislocations (BPDs) under forward current operation of 4H-SiC bipolar devices, giving rise to a reliability deterioration mode called “bipolar degradation”. Several groups have propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77982d5ba8ea90694a7c8a9a399be29
https://doi.org/10.4028/www.scientific.net/msf.963.288
https://doi.org/10.4028/www.scientific.net/msf.963.288
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We studied an advanced drift layer design which has an intermediate layer in mesa region for two-step-oxide field-plate MOSFET. The intermediate layer is formed by a high energy ion-implantation via source contact window. By TCAD simulation, it was c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc22aa01ac1208ea44738a39cd8f9aad
https://doi.org/10.23919/ispsd50666.2021.9452300
https://doi.org/10.23919/ispsd50666.2021.9452300
Publikováno v:
ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems.
Power modules are being developed with the aim of increasing power output. Achieving this aim requires increased current density in power modules. However, at high current densities, power modules can degrade as a result of electromigration, which is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc4e8376e354d223b2f1f28c2833eb89
https://doi.org/10.1115/ipack2020-2556
https://doi.org/10.1115/ipack2020-2556