Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Akihiro, Konda"'
Publikováno v:
Journal of Photopolymer Science and Technology. 35:1-7
Publikováno v:
Advances in Patterning Materials and Processes XL.
Publikováno v:
Advances in Patterning Materials and Processes XXXVIII.
Electron beam (EB) lithography is indispensable for the fabrication of photomasks including extreme ultraviolet masks. With the miniaturization of electronic devices, the requirement for photomasks becomes severe. When the feature size was decreased,
Autor:
Kazumasa Okamoto, Akihiro Konda, Yuki Ishimaru, Takahiro Kozawa, Yasunobu Nakagawa, Masamichi Nishimura
Publikováno v:
Japanese Journal of Applied Physics. 61:066505
The demand for improved performance of chemically amplified resists (CARs) is continually increasing with the development of extreme ultraviolet lithography. Acid-generation promoters (AGPs) increase the sensitivity of CARs by increasing the initial
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
The photo-mask in lithographic process of semiconductor device has an important role to transfer the downsized target image to the wafer. Due to the development of information society, demand for semiconductor devices has been growing. In order to in
Autor:
Koki Ueno, Kazumasa Okamoto, Yuichi Inubushi, Takahiro Kozawa, Shunpei Kawai, Akira Kon, Hiroo Kinoshita, Shigeki Owada, Yuta Ikari, Thanh-Hung Dinh, Yohei Arai, Masahiko Ishino, Akihiro Konda, Masaharu Nishikino, Shigeo Hori
Publikováno v:
Applied Physics Express. 14:066502
Efforts are being focused on increasing the power of extreme ultraviolet (EUV) light sources used in semiconductor manufacturing to increase the throughput. As a result, the investigation of the effect of high power sources on resist materials is a c
Autor:
Kazumasa, Okamoto, Shunpei, Kawai, Yuta, Ikari, Shigeo, Hori, Akihiro, Konda, Koki, Ueno, Yohei, Arai, Masahiko, Ishino, Dinh, Thanhhung, Masaharu, Nishikino, Akira, Kon, Shigeki, Owada, Yuichi, Inubushi, Hiroo, Kinoshita, Takahiro, Kozawa
Publikováno v:
Applied Physics Express. 14:066502
Efforts are being focused on increasing the power of EUV light sources used in semiconductor manufacturing to increase the throughput. As a result, the investigation of the effect of high power sources on resist materials is a critical issue. A chemi
Publikováno v:
Japanese Journal of Applied Physics. 59:086506
Publikováno v:
Japanese Journal of Applied Physics. 59:086501
The transistors have been miniaturized to increase their integration. With the miniaturization, the thickness of resist has been decreased to prevent them from collapsing. In this study, the resist thickness dependence of the pattern formation of a c
Autor:
Kenji Urayama, Kohzo Ito, Akihiro Konda, Toshikazu Takigawa, Masatoshi Kidowaki, Chikara Katsuno
Publikováno v:
Advanced Materials. 25:4636-4640
Polymer membranes comprising slide-ring gels with movable cross-links exhibit a nonlinear pressure-dependence in the fluidic flow rate. The proportional constant between the flow rate and pressure significantly changes at a critical pressure. The sli