Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Akihiko Ishibashi"'
Autor:
Akihiko Ishibashi RT, Hiromasa Kurosaki MD, PhD, Kosei Miura MD, Nobuko Utsumi MD, PhD, Hideyuki Sakurai MD, PhD
Publikováno v:
Technology in Cancer Research & Treatment, Vol 20 (2021)
Objectives: Hippocampus-sparing whole-brain radiotherapy (HS-WBRT) using tomotherapy is known to provide a better dose distribution than volumetric-modulated arc therapy but requires an extended irradiation time. The present study aimed to investigat
Externí odkaz:
https://doaj.org/article/ea11c10f1ee749138883e04ae7bc5004
Publikováno v:
Technology in Cancer Research & Treatment, Vol 20 (2021)
Technology in Cancer Research & Treatment
Technology in Cancer Research & Treatment
Objectives: Hippocampus-sparing whole-brain radiotherapy (HS-WBRT) using tomotherapy is known to provide a better dose distribution than volumetric-modulated arc therapy but requires an extended irradiation time. The present study aimed to investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce07941303cc3cfab8ecaa0a1720048d
https://doaj.org/article/ea11c10f1ee749138883e04ae7bc5004
https://doaj.org/article/ea11c10f1ee749138883e04ae7bc5004
Autor:
Naoto Yanagita, Kentaro Miyano, Naoya Ryoki, Akihiko Ishibashi, Akio Ueta, Hiroshi Ohno, Masaki Nobuoka
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1041
III-N semiconductors growth on high quality ScAlMgO4 (SCAMO) substrates was studied. The GaN epitaxial layer grown on the SCAMO substrate showed a low defect density of 5.6 × 107 cm−2 evaluated by cathode luminescence and had a distinct improvemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeeb576e1f6a8a69cfe90e5b56a4e2a5
https://doi.org/10.7567/1347-4065/ab06b5
https://doi.org/10.7567/1347-4065/ab06b5
Publikováno v:
Materials Science Forum. :586-592
Dynamic recrystallization (DRX) behavior in a coarse columnar-grained Cu-0.65Sn-0.025P and Cu-0.025P (mass%) alloys were systematically investigated by compression tests at temperatures between 1073 K and 1253 K and at true strain rates from 2 x 10-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797f3be3fc515d137df99950438281e3
https://doi.org/10.4028/www.scientific.net/msf.715-716.586
https://doi.org/10.4028/www.scientific.net/msf.715-716.586
Publikováno v:
Materials Science Forum. :1271-1274
Dynamic recrystallization (DRX) behaviour in a newly developed Cu-Sn-P alloy for heat exchangers and tubes was systematically investigated. For this purpose, Cu-Sn-P alloys with different content of Sn were deformed in compression at temperatures bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f456c142e4f7e646a756995a64deae4
https://doi.org/10.4028/www.scientific.net/msf.654-656.1271
https://doi.org/10.4028/www.scientific.net/msf.654-656.1271
Publikováno v:
Materials Science Forum. :1267-1270
Dynamic recrystallization (DRX) behavior in a Cu-0.65Sn-0.025P (mass%) alloy (Cu-Sn-P), which had been newly developed for high strength copper tubes, was systematically investigated. For this purpose, an orientation-controlled bicrystal ( =28o);
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6082d891a159326a4b66272bccf614c7
https://doi.org/10.4028/www.scientific.net/msf.654-656.1267
https://doi.org/10.4028/www.scientific.net/msf.654-656.1267
Autor:
Toshiya Yokogawa, Yusuke Ueki, Akihiko Ishibashi, Kohzo Nakamura, Toshitaka Shimamoto, Tsunemasa Taguchi, Yasutoshi Kawaguchi, Yoichi Yamada, Gaku Sugahara
Publikováno v:
physica status solidi (b). 241:2730-2734
Structural properties of AlGaN layer on the GaN seed layer fabricated by air-bridged lateral epitaxial growth (ABLEG) have been studied by spatially resolved cathodoluminescence (CL) microscopy. The cross-sectional spatially resolved CL images of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e11249a931a0a6b959a56e8e18b4dc
https://doi.org/10.1002/pssb.200405073
https://doi.org/10.1002/pssb.200405073
Autor:
Toshitaka Shimamoto, Gaku Sugahara, Atsunori Mochida, Yasutoshi Kawaguchi, Akihiko Ishibashi, Toshiya Yokogawa
Publikováno v:
physica status solidi (c). :2107-2110
A high quality AlGaN layer with low dislocation density and low c-axis tilt angle in wing regions was demonstrated by the advanced ELO technique, namely air-bridged lateral epitaxial growth. An underlying GaN seed layer was grooved along the 〈〉Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2dc666a9ec465ae213e0d032820b9e9
https://doi.org/10.1002/pssc.200303412
https://doi.org/10.1002/pssc.200303412
Autor:
Akihiko Ishibashi, Yasutoshi Kawaguchi, Tsunemasa Taguchi, Gaku Sugahara, Yoichi Yamada, Toshiya Yokogawa
Publikováno v:
physica status solidi (c). :2116-2119
We have systematically studied radiative and nonradiative recombination processes by time-resolved photoluminescence (TR-PL) measurements in InGaN based multiple quantum wells (MQWs) with various In content or Si doping conditions of barrier layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c97249a5e211e49d2ed6e76141fd57
https://doi.org/10.1002/pssc.200303491
https://doi.org/10.1002/pssc.200303491
Publikováno v:
Japanese Journal of Applied Physics. 42:L1248-L1251
Two-dimensional deformations and stress distributions in air-bridged lateral-epitaxial-grown GaN (ABLEG-GaN) films have been studied by atomic force microscopy (AFM), two-dimensional finite element method (FEM) analysis, and micro-Raman spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3151837aa547415460474f1435aedbca
https://doi.org/10.1143/jjap.42.l1248
https://doi.org/10.1143/jjap.42.l1248