Zobrazeno 1 - 10
of 523
pro vyhledávání: '"Akhtar, W."'
Autor:
Möser, J., Popli, H., Tennahewa, T. H., Biktagirov, T., Behrends, J., Akhtar, W., Malissa, H., Boehme, C., Schmidt, W. G., Gerstmann, U., Lips, K.
Paramagnetic point defects in silicon provide qubits that could open up pathways towards silicon-technology based, low-cost, room-temperature (RT) quantum sensing. The silicon dangling bond (db) is a natural candidate, given its sub-nanometer localiz
Externí odkaz:
http://arxiv.org/abs/2402.16523
Autor:
Gross, I., Akhtar, W., Garcia, V., Martínez, L. J., Chouaieb, S., Garcia, K., Carrétéro, C., Barthélémy, A., Appel, P., Maletinsky, P., Kim, J. -V., Chauleau, J. Y., Jaouen, N., Viret, M., Bibes, M., Fusil, S., Jacques, V.
Publikováno v:
Nature 549, 252-256 (2017)
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems
Externí odkaz:
http://arxiv.org/abs/2011.12399
Autor:
Tanos, R., Akhtar, W., Monneret, S., de Oliveira, F. Favaro, Seniutinas, G., Munsch, M., Maletinsky, P., Gratiet, L. le, Sagnes, I., Dréau, A., Gergely, C., Jacques, V., Baffou, G., Robert-Philip, I.
Nitrogen-Vacancy centers in diamond possess an electronic spin resonance that strongly depends on temperature, which makes them efficient temperature sensor with a sensitivity down to a few mK/$\sqrt{\rm Hz}$. However, the high thermal conductivity o
Externí odkaz:
http://arxiv.org/abs/2001.09629
Autor:
Haykal, A., Fischer, J., Akhtar, W., Chauleau, J. -Y., Sando, D., Finco, A., Carretero, C., Jaouen, N., Bibes, M., Viret, M., Fusil, S., Jacques, V., Garcia, V.
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the
Externí odkaz:
http://arxiv.org/abs/1912.12470
Autor:
Akhtar, W., Hrabec, A., Chouaieb, S., Haykal, A., Gross, I., Belmeguenai, M., Gabor, M. S., Shields, B., Maletinsky, P., Thiaville, A., Rohart, S., Jacques, V.
Publikováno v:
Phys. Rev. Applied 11, 034066 (2019)
We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of $100$ nm in a single ultrathin layer of the Heusler alloy Co$_2$FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in
Externí odkaz:
http://arxiv.org/abs/1812.05345
Autor:
Chouaieb, S., Martínez, L. J., Akhtar, W., Robert-Philip, I., Dréau, A., Brinza, O., Achard, J., Tallaire, A., Jacques, V.
Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of
Externí odkaz:
http://arxiv.org/abs/1806.11419
Autor:
Gross, I., Akhtar, W., Hrabec, A., Sampaio, J., Martinez, L. J., Chouaieb, S., Shields, B. J., Maletinsky, P., Thiaville, A., Rohart, S., Jacques, V.
Publikováno v:
Phys. Rev. Materials 2, 024406 (2018)
Nitrogen-vacancy magnetic microscopy is employed in quenching mode as a non-invasive, high resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected
Externí odkaz:
http://arxiv.org/abs/1709.06027
Publikováno v:
In Clinical Medicine November 2023 23(6) Supplement:92-93
Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in illuminated hydr
Externí odkaz:
http://arxiv.org/abs/1501.03485
Autor:
Obata, T., Takeda, K., Kamioka, J., Kodera, T., Akhtar, W. M., Sawano, K., Oda, S., Shiraki, Y., Tarucha, S.
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams ar
Externí odkaz:
http://arxiv.org/abs/1311.2681