Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Akhil Sudarsanan"'
Autor:
Kaushik Nayak, Akhil Sudarsanan
Publikováno v:
IEEE Transactions on Electron Devices. 68:2611-2617
In this article, the impact of random fluctuation sources, such as metal gate granularity (MGG), line edge roughness (LER), and random dopant fluctuations (RDFs), are numerically studied for U-shaped n-channel fully depleted silicon on insulator (FDS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe8a92e253c263aa5e26077be126a120
https://doi.org/10.1109/ted.2021.3074116
https://doi.org/10.1109/ted.2021.3074116
Publikováno v:
2021 International Semiconductor Conference (CAS).
The effect of interface trap variability (ITV) on horizontally stacked nanosheet FET (NSHFET) has been explored using TCAD based 3-D quantum corrected Drift-Diffusion simulation framework for sub-3 nm technology node. It is revealed that 3-stacked NS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3fc15a9c0b75e763d330be572ee90e5
https://doi.org/10.1109/cas52836.2021.9604183
https://doi.org/10.1109/cas52836.2021.9604183
Publikováno v:
IEEE Transactions on Electron Devices. 66:4646-4652
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi Fin n-FET due to the impact of random fluctuation sources such as gate work function variability induced by metal gate granularity (MGG) and Fin line edge r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c4386e1558b5573a1999ab3763b352
https://doi.org/10.1109/ted.2019.2941896
https://doi.org/10.1109/ted.2019.2941896
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, work function variability (WFV) of stacked nanosheet FET (NSHFET) has been numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework for sub-7nm high performance logic applications. The WFV induced NSHFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::becd474f42fa941bdabc706d3cd4fcf2
https://doi.org/10.1109/edtm47692.2020.9117974
https://doi.org/10.1109/edtm47692.2020.9117974
Publikováno v:
IEEE Transactions on Electron Devices. 65:2721-2728
Device self-heating effects (SHEs) in nonplanar Si MOS transistors such as fin field-effect transistors (FinFETs) and nanowire FETs have become a serious issue in designing well-tempered CMOS devices for future logic nodes. The device thermal contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdec553235996962f8b579c567b22cfa
https://doi.org/10.1109/ted.2018.2834979
https://doi.org/10.1109/ted.2018.2834979