Zobrazeno 1 - 10 of 50 pro vyhledávání: '"Akhil Ajay"'
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Akademický článek
Structural properties of graded In x Ga As metamorphic buffer layers for quantum dots emitting in the telecom bands
Autor: Bianca Scaparra, Akhil Ajay, Pavel S Avdienko, Yuyang Xue, Hubert Riedl, Paul Kohl, Björn Jonas, Beatrice Costa, Elise Sirotti, Paul Schmiedeke, Viviana Villafañe, Ian D Sharp, Eugenio Zallo, Gregor Koblmüller, Jonathan J Finley, Kai Müller
Publikováno v: Materials for Quantum Technology, Vol 3, Iss 3, p 035004 (2023)
In recent years, there has been a significant increase in interest in tuning the emission wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing silica fiber networks. In this work, we develop and explore compositio
Externí odkaz: https://doaj.org/article/b0ff0ef1929d4a6bbf3a251db3d5e553
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2
Akademický článek
Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
Autor: Michael Sun, Rodrigo Blasco, Julian Nwodo, María de la Mata, Sergio I. Molina, Akhil Ajay, Eva Monroy, Sirona Valdueza-Felip, Fernando B. Naranjo
Publikováno v: Materials, Vol 15, Iss 20, p 7373 (2022)
AlxIn1−xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlxIn1−xN layers deposited on Si with different crystallographic orientations, (100) and (111), via ra
Externí odkaz: https://doaj.org/article/e2a773d3437e434e8aaa447312ec3d4b
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6
Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon
Autor: Steffen Meder, Paul Schmiedeke, Fabio del Giudice, Markus Döblinger, Gregor Koblmüller, Sergej Fust, H. Riedl, Johannes Pantle, Jonathan J. Finley, Akhil Ajay
Publikováno v: 2022 Compound Semiconductor Week (CSW).
Low-bandgap semiconductor nanowires (NWs) attract considerable interest for mid-infrared (MIR) photonics and optoelectronics, where ideal candidate materials require surface-passivated core–shell systems with large tunability in band offset, lineup
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1aaeb0b4cc94ca811e2a3db6eda29be
https://doi.org/10.1109/csw55288.2022.9930369
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7
Heterogeneous III-V Nanowire Lasers and Quantum Dot Emitters on Silicon Photonic Circuits
Autor: Paul Schmiedeke, Nitin Mukhundhan, Andreas Thurn, Akhil Ajay, Thomas Stettner, Jochen Bissinger, Hyowon Jeong, Tobias Schreitmüller, Jona Zöllner, Jonathan J. Finley, Gregor Koblmüller
Publikováno v: Optica Advanced Photonics Congress 2022.
Recent progress in III-V nanowire (NW) light sources integrated onto Si (quantum) photonic circuits is presented, illustrating key results for low-threshold vertical-cavity NW-lasers and integrated NW-quantum emitters with efficient light coupling to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4291b36f5230225d8a20ed548e215133
https://doi.org/10.1364/iprsn.2022.itu3b.4
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8
Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale
Autor: Eva Monroy, Edith Bellet-Amalric, Enrico Di Russo, L. Rigutti, Akhil Ajay, Catherine Bougerol, Vincent Grenier, Eric Robin
Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2021, 13 (3), pp.4165-4173. ⟨10.1021/acsami.0c19174⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (3), pp.4165-4173. ⟨10.1021/acsami.0c19174⟩
International audience; Attaining low-resistivity AlxGa1–xN layers is one keystone to improve the efficiency of light-emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of AlxGa1–xN/Ge samples with 0
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdcf5e0985a47dbb3a35066878ef8a37
https://hal.science/hal-03123453
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9
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
Autor: M. den Hertog, Nicolas Mollard, Fabrice Donatini, I. Dimkou, Edith Bellet-Amalric, Eva Monroy, Stephen T. Purcell, Jonas Lähnemann, Catherine Bougerol, Anjali Harikumar, Gilles Ledoux, Akhil Ajay
Publikováno v: Nanotechnology
Nanotechnology, 2020, 31 (20), pp.204001. ⟨10.1088/1361-6528/ab704d⟩
Nanotechnology, Institute of Physics, 2020, 31 (20), pp.204001. ⟨10.1088/1361-6528/ab704d⟩
International audience; In this paper, we describe the design and characterization of 400 nm long (88 periods) Al x Ga1−x N/AlN (0 ≤ x ≤ 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::029a6c58826bcb85040039fd7c3af344
https://hal.science/hal-02869555
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10
Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters
Autor: Anjali Harikumar, Fabrice Donatini, Stephen T. Purcell, Akhil Ajay, Eva Monroy, Edith Bellet-Amalric, Adeline Grenier, Martien Den Hertog, Ioanna Dimkou
Publikováno v: physica status solidi (a)
physica status solidi (a), Wiley, 2020, 217 (7), pp.1900714. ⟨10.1002/pssa.201900714⟩
physica status solidi (a), 2020, 217 (7), pp.1900714. ⟨10.1002/pssa.201900714⟩
International audience; This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are gro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::369a79991fe4d47729ac267efc5a8c7e
https://hal.archives-ouvertes.fr/hal-02413833/document
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