Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Akheyar, A."'
Autor:
Cho, Moonju, Akheyar, Amal, Aoulaiche, Marc, Degraeve, Robin, Ragnarsson, Lars-Åke, Tseng, Joshua, Hoffmann, Thomas Y., Groeseneken, Guido
Publikováno v:
In Solid State Electronics 2011 62(1):67-71
Publikováno v:
In Solid State Electronics 2009 53(11):1177-1182
Autor:
Li, Z., Schram, T., Pantisano, L., Witters, T., Stesmans, A., Akheyar, A., Afanasiev, V.V., Yamada, N., Takaaki, T., De Gendt, S., De Meyer, K.
Publikováno v:
In Microelectronic Engineering 2007 84(9):2213-2216
Autor:
Li, Z., Schram, T., Pantisano, L., Stesmans, A., Conard, T., Shamuilia, S., Afanasiev, V.V., Akheyar, A., Van Elshocht, S., Brunco, D.P., Deweerd, W., Naoki, Y., Lehnen, P., De Gendt, S., De Meyer, K.
Publikováno v:
In Microelectronics Reliability 2007 47(4):518-520
Autor:
Lobert, P.E., Bourgeois, D., Pampin, R., Akheyar, A., Hagelsieb, L.M., Flandre, D., Remacle, J.
Publikováno v:
In Sensors & Actuators: B. Chemical 2003 92(1):90-97
Autor:
Kittl, J.A. ∗, Lauwers, A., Chamirian, O., Van Dal, M., Akheyar, A., De Potter, M., Lindsay, R., Maex, K.
Publikováno v:
In Microelectronic Engineering 2003 70(2):158-165
Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Autor:
Flandre, D *, Adriaensen, S, Akheyar, A, Crahay, A, Demeûs, L, Delatte, P, Dessard, V, Iniguez, B, Nève, A, Katschmarskyj, B, Loumaye, P, Laconte, J, Martinez, I, Picun, G, Rauly, E, Renaux, C, Spôte, D, Zitout, M, Dehan, M, Parvais, B, Simon, P, Vanhoenacker, D, Raskin, J.-P
Publikováno v:
In Solid State Electronics 2001 45(4):541-549
Autor:
Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas’ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.
Publikováno v:
Journal of Applied Physics; 2/1/2007, Vol. 101 Issue 3, p034503-N.PAG, 9p, 2 Diagrams, 1 Chart, 13 Graphs
Autor:
Lars-Ake Ragnarsson, Amal Akheyar, Guido Groeseneken, Robin Degraeve, Moonju Cho, Marc Aoulaiche, Thomas Hoffmann, J. Tseng
Publikováno v:
Solid-State Electronics. 62:67-71
Flat band voltage (VFB) roll-off in long channel devices at thin equivalent oxide thickness (EOT) is studied on SiO2/nitrided-HfSiO stacks. VFB increases when SiO2 interfacial layer thickness decreases, and charges pumping (CP) frequency sweep analys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abc7701146b7a100ee7e873b3c4bf0b
https://doi.org/10.1016/j.sse.2011.04.007
https://doi.org/10.1016/j.sse.2011.04.007
Publikováno v:
Solid-State Electronics. 53:1177-1182
The study of the low frequency (1/ f ) noise of strained Si 0.8 Ge 0.2 p-channel MOSFETs with poly Si/HfSiO x gate stacks is presented. Apart from the reduced threshold voltage, improved maximum transconductance and increased low-field mobility offer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc16183e4a1cb1b1f021b3bd646ddfe
https://doi.org/10.1016/j.sse.2009.07.007
https://doi.org/10.1016/j.sse.2009.07.007