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Autor:
Akbari Tochaei, A.1 amirakbari182@gmail.com, Arabshahi, H.2, Benam, M.1, Vatan-Khahan, A.3, Abedininia, M.3
Publikováno v:
Journal of Experimental & Theoretical Physics. Nov2016, Vol. 123 Issue 5, p869-874. 6p.
Publikováno v:
Journal of Experimental and Theoretical Physics. 123:869-874
Electron transport properties of InP-based MOSFET as a new channel material with Al2O3 as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valley
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::134ece1caaa84d7a910734e795a6f4df
https://doi.org/10.1134/s1063776116130203
https://doi.org/10.1134/s1063776116130203