Zobrazeno 1 - 10
of 246
pro vyhledávání: '"Akbar A Khan"'
Publikováno v:
AIP Advances, Vol 14, Iss 1, Pp 015163-015163-12 (2024)
This article focuses on discrete survival data analysis, employing a doubly Type-I censoring scheme (DT1SC) under a Bayesian framework for parameters estimation in a 3-component mixture geometric (3-CMG) distribution. The non-informative (uniform) pr
Externí odkaz:
https://doaj.org/article/b064473d2da649bb815fc246dfec5bdf
Autor:
Islam, Naeemul, Yusof, Nur Syahadah, Packeer Mohamed, Mohamed Fauzi, M., Syamsul, Akbar Jalaludin Khan, Muhammad Firdaus, Ghazali, Nor Azlin, Hairi, Mohd Hendra
Publikováno v:
Microelectronics International, 2022, Vol. 40, Issue 1, pp. 63-67.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/MI-03-2022-0044
Autor:
Nur Syahadah Yusof, Mohamed Fauzi Packeer Mohamed, Nor Azlin Ghazali, Muhammad Firdaus Akbar Jalaludin Khan, Safizan Shaari, Mohd Nazim Mohtar
Publikováno v:
Alexandria Engineering Journal, Vol 61, Iss 12, Pp 11405-11431 (2022)
Demand for organic electronics has growth tremendously for the past decade, owing to their high flexibility and low processing cost attributes. As part of the important elements in organic electronics, a solution processable organic thin film transis
Externí odkaz:
https://doaj.org/article/224ef461df0343ccbb16f6936387784c
Autor:
Omer Ali, Mohamad Khairi Ishak, Ashraf Bani Ahmed, Mohd Fadzli Mohd Salleh, Chia Ai Ooi, Muhammad Firdaus Akbar Jalaludin Khan, Imran Khan
Publikováno v:
Alexandria Engineering Journal, Vol 61, Iss 12, Pp 9831-9848 (2022)
Wireless sensor networks (WSN) are low-resource devices that run on small batteries. The availability of battery energy, device drive cycles, and environmental conditions all have an impact on node lifetime. The state of charge (SoC) is an important
Externí odkaz:
https://doaj.org/article/271634a194864d45bc05709a39dae4ee
Autor:
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul
Publikováno v:
Crystals, Vol 12, Iss 11, p 1581 (2022)
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent mate
Externí odkaz:
https://doaj.org/article/1eace3c75b9b4de7b69474a36c914177
Autor:
Nor Azlin Ghazali, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Harold Chong
Publikováno v:
Key Engineering Materials. 947:33-38
In this study, ZnO nanowire field-effect transistor (FET) with an aluminium-doped ZnO (AZO) and an aluminium (Al) dual layer source and drain contact are fabricated and temperature dependent characteristics in the range of 200 – 300 K are analyzed
Publikováno v:
Advances in Mathematical Physics, Vol 2021 (2021)
In this paper, we establish strong and Δ convergence results for mappings satisfying condition Bγ,μ through a newly introduced iterative process called JA iteration process. A nonlinear Hadamard space is used the ground space for establishing our
Externí odkaz:
https://doaj.org/article/1cbc9253f4374ebfb1d88cc8a210b8f9
Autor:
Akbar R. Khan
Publikováno v:
IEEE Potentials. 42:15-20
Publikováno v:
Egyptian Orthodontic Journal. 62:53-60
Publikováno v:
Khyber Medical University Journal, Vol 10, Iss 3, Pp 140-145 (2018)
OBJECTIVE: To determine the accuracy of Tanaka and Johnston and Bherwani’s prediction equations when applied to a sample of Pashtun population of Pakistan. METHODS: Odontometric data from casts of 180 subjects (90 males and 90 females, ages 13-19 y
Externí odkaz:
https://doaj.org/article/0426a335861c4540b33f8f92e6714c78