Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Akash Levy"'
Publikováno v:
The Physics Teacher. 60:639-641
After the passage of the U.S. National Quantum Initiative Act in December 2018, the National Science Foundation (NSF) and the Office of Science and Technology Policy (OSTP) recently assembled an interagency working group and conducted a workshop titl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd920450e8b2d5f13b9ca7450331479
https://doi.org/10.1119/5.0027661
https://doi.org/10.1119/5.0027661
Autor:
Yue-Der Chih, Weier Wan, Ching-Hua Wang, Harry Chuang, Hongjie Wang, Po-Han Chen, Wei-Chen Chen, Haitong Li, Priyanka Raina, Akash Levy, Win-San Khwa, H.-S. Philip Wong, Meng-Fan Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:6637-6643
Learning from a few examples (one/few-shot learning) on the fly is a key challenge for on-device machine intelligence. We present the first chip-level demonstration of one-shot learning with Stanford Associative memory for Programmable, Integrated Ed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28389298af4c7aeebdd594f2770b3e66
https://doi.org/10.1109/ted.2021.3110464
https://doi.org/10.1109/ted.2021.3110464
Autor:
Mark Nelson, Priyanka Raina, Akash Levy, Tony F. Wu, S. Simon Wong, E. Ray Hsieh, Subhasish Mitra, Xin Zheng, H.-S. Philip Wong, Robert M. Radway, Binh Q. Le
Publikováno v:
IEEE Transactions on Electron Devices. 68:4397-4403
HfO2-based resistive RAM (RRAM) is an emerging nonvolatile memory technology that has recently been shown capable of storing multiple bits-per-cell. The energy/delay costs of an RRAM write operation are dependent on the number of pulses required for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afe0c8b562f883da0b6dc7ae8a54d76
https://doi.org/10.1109/ted.2021.3097975
https://doi.org/10.1109/ted.2021.3097975
Publikováno v:
2022 27th Asia and South Pacific Design Automation Conference (ASP-DAC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70625246d0701a2b533dbe003bc89e58
https://doi.org/10.1109/asp-dac52403.2022.9712515
https://doi.org/10.1109/asp-dac52403.2022.9712515
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We developed a Monte Carlo simulator to compute the state-dependent I-V characteristics of three-terminal (3T) RRAM devices. State switching in these devices is modeled using a combination of vacancy migration and trap-assisted-tunneling mechanisms.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44850fdfef1050c219415f8da5121e78
https://doi.org/10.23919/sispad49475.2020.9241659
https://doi.org/10.23919/sispad49475.2020.9241659
Autor:
Feng Bi, Mengchen Huang, Akash Levy, Jeremy Levy, Michelle Tomczyk, Patrick Irvin, Guanglei Cheng, Shicheng Lu
Publikováno v:
Journal of Visualized Experiments : JoVE
Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16735a955b285bd94c066eec424dd880
https://doi.org/10.3791/51886-v
https://doi.org/10.3791/51886-v