Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Akane Samizo"'
Autor:
Makoto Minohara, Shutaro Asanuma, Hidehiro Asai, Yuka Dobashi, Akane Samizo, Yasuhisa Tezuka, Kenichi Ozawa, Kazuhiko Mase, Izumi Hase, Naoto Kikuchi, Yoshihiro Aiura
Publikováno v:
Nano Select, Vol 3, Iss 6, Pp 1012-1020 (2022)
Abstract Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a
Externí odkaz:
https://doaj.org/article/7201ac383ca147b7a43dcabcce6606e1
Autor:
Makoto Minohara, Naoto Kikuchi, Kouhei Tsukuda, Yuka Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura
Publikováno v:
Materials & Design, Vol 216, Iss , Pp 110549- (2022)
The development of p-type oxide semiconductors is challenging owing to the localized nature of the valence band maximum (VBM), which primarily comprises O 2p orbitals. Although some Sn2+-based pyrochlore-type oxides (A2B2O7) with VBMs comprising spat
Externí odkaz:
https://doaj.org/article/51d1c70a732446a1886f3868e53f9c0a
Publikováno v:
Journal of the American Ceramic Society. 106:1540-1546
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f884265ff91b272dc269de597dbc6cf5
https://doi.org/10.1111/jace.18830
https://doi.org/10.1111/jace.18830
Autor:
Makoto Minohara, Yuka Dobashi, Naoto Kikuchi, Akane Samizo, Takashi Honda, Xinyi He, Takayoshi Katase, Toshio Kamiya, Keishi Nishio, Yoshihiro Aiura
Publikováno v:
Materials Advances. 3:9111-9116
We demonstrate that hole carrier density of α-SnWO4 can be tuned by controlling the annealing process. Hole carrier density increased by two orders of magnitude and achieved a value close to 1019 cm−3 at an optimum O2 gas concentration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa57c81c314a2aaf087b0a16ef466d19
https://doi.org/10.1039/d2ma00815g
https://doi.org/10.1039/d2ma00815g
Autor:
Naoto Kikuchi, Kenichi Ozawa, Kazuhiko Mase, Yoshihiro Aiura, Makoto Minohara, Yuka Dobashi, Izumi Hase, Hidehiro Asai, Shutaro Asanuma, Akane Samizo, Yasuhisa Tezuka
Publikováno v:
Nano Select. 3:1012-1020
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a6640d2d0641cf234c83ada4d74ef2
https://doi.org/10.1002/nano.202100272
https://doi.org/10.1002/nano.202100272
Autor:
Makoto Minohara, Kyoko K. Bando, Keishi Nishio, Akane Samizo, Naoto Kikuchi, Ko Mibu, Yoshihiro Aiura
Publikováno v:
The Journal of Physical Chemistry C. 125:17117-17124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59059554af7a89cd2f269f9ca9ac7225
https://doi.org/10.1021/acs.jpcc.0c11423
https://doi.org/10.1021/acs.jpcc.0c11423
Autor:
Yuka Dobashi, Ko Mibu, Hiroshi Kumigashira, Yoshiyuki Yoshida, Makoto Minohara, Akane Samizo, Yoshihiro Aiura, Keishi Nishio, Kouhei Tsukuda, Naoto Kikuchi, Izumi Hase
Publikováno v:
Inorganic Chemistry. 60:8035-8041
Diodes, memories, logic circuits, and most other current information technologies rely on the combined use of p- and n-type semiconductors. Although oxide semiconductors have many technologically attractive functionalities, such as transparency and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f989d78a92190649d14dcd0989603508
https://doi.org/10.1021/acs.inorgchem.1c00530
https://doi.org/10.1021/acs.inorgchem.1c00530
Autor:
Akane Samizo, Kyoko K. Bando, Naoto Kikuchi, Yoshihiro Aiura, Yoshiyuki Yoshida, Makoto Minohara
Publikováno v:
The Journal of Physical Chemistry C. 124:1755-1760
Obtaining semiconducting properties that meet practical standards for p-type transparent oxide semiconductors is challenging due to the balance between the defects that generate hole and electron c...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::823932d4aed366acbbfad0eb6437f964
https://doi.org/10.1021/acs.jpcc.9b11616
https://doi.org/10.1021/acs.jpcc.9b11616
Publikováno v:
MRS Advances. 4:27-32
Sn2Nb2O7 and SnNb2O6 are promising candidates for wide-gap p-type conducting oxides with high mobility, because their valence-band maximum are composed of Sn 5s orbital with large spatial spreading and isotropic nature. Though hole carriers were gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50b5d7ce19e8774af5e342e2c9491cc
https://doi.org/10.1557/adv.2018.687
https://doi.org/10.1557/adv.2018.687
Autor:
Akane Samizo, Kazuhiko Mase, Kenichi Ozawa, Yoshihiro Aiura, Makoto Minohara, Kyoko K. Bando, Hiroshi Kumigashira, Yasuhisa Tezuka
Publikováno v:
Physical Chemistry Chemical Physics. 21:14646-14653
Local distortion in the conduction pathway has a significant influence on the conducting properties of oxides. The electronic states induced in the band gap of SrTiO3 by La doping were investigated using photoemission spectroscopy (PES) and soft X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cda18aed5696767462dee930785f903
https://doi.org/10.1039/c9cp02307k
https://doi.org/10.1039/c9cp02307k