Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Ajoy, Arvind"'
Publikováno v:
IEEE Trans. Electron Devices 69 (2022) 3359 - 3366
We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to displacement of
Externí odkaz:
http://arxiv.org/abs/2204.10180
A simulation-based study of Kramers' escape problem in the bistable well of a ferroelectric capacitor is presented. This problem deals with the escape of a particle undergoing Brownian motion over an energy barrier. Using this framework, and under th
Externí odkaz:
http://arxiv.org/abs/2112.01373
Publikováno v:
IEEE Trans. Electron Devices. 67 (2020) 4413-4420
A common way to analyze electrostatic microelectromechanical systems (MEMS) actuators is to use their energy-displacement landscape. Here, we describe an alternative approach to analyze electrostatic MEMS actuators using their energy-charge landscape
Externí odkaz:
http://arxiv.org/abs/2002.12430
Autor:
TR, Raghuram, Ajoy, Arvind
Publikováno v:
IEEE Trans. Electron Devices. 67 (2020) 5174-5181
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal for reducti
Externí odkaz:
http://arxiv.org/abs/1904.12808
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanica
Externí odkaz:
http://arxiv.org/abs/1505.00378
Autor:
Fathipour, Sara, Remskar, Maja, Varlec, Ana, Ajoy, Arvind, Yan, Rusen, Vishwanath, Suresh, Hwang, Wan Sik, Huili, Xing, Jena, Debdeep, Seabaugh, Alan
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectro
Externí odkaz:
http://arxiv.org/abs/1411.6000
Publikováno v:
J. Appl. Phys. 113, 064506, 2013
We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured
Externí odkaz:
http://arxiv.org/abs/1407.6096
Publikováno v:
J. Phys.: Condens. Matter. vol. 24, no. 5, pp. 055504, 2012
Complex bands $\vec{k}^{\perp}(E)$ in a semiconductor crystal, along a general direction $\vec{n}$, can be computed by casting Schr\"odinger's equation as a generalized polynomial eigenvalue problem. When working with primitive lattice vectors, the o
Externí odkaz:
http://arxiv.org/abs/1407.6093
Autor:
Boykin, Timothy B., Ajoy, Arvind, Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approx
Externí odkaz:
http://arxiv.org/abs/1407.4598
Autor:
Boykin, Timothy B., Ajoy, Arvind
Publikováno v:
In Physica B: Physics of Condensed Matter 15 February 2018 531:130-138
