Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ajinkya K. Ranade"'
Autor:
Venkata Krishna Rao Rama, Ajinkya K. Ranade, Pradeep Desai, Bhagyashri Todankar, Golap Kalita, Hiroo Suzuki, Masaki Tanemura, Yasuhiko Hayashi
Publikováno v:
ACS Omega, Vol 7, Iss 30, Pp 26021-26028 (2022)
Externí odkaz:
https://doaj.org/article/7c4f30bc2b914dc59d7a1b1a2bf4fb3c
Autor:
Rama Venkata Krishna Rao, Ajinkya K. Ranade, Pradeep Desai, Golap Kalita, Hiroo Suzuki, Yasuhiko Hayashi
Publikováno v:
SN Applied Sciences, Vol 3, Iss 10, Pp 1-9 (2021)
Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperat
Externí odkaz:
https://doaj.org/article/5fbd9be782fb41678c0b1163879efecd
Autor:
Ajinkya K. Ranade, Golap Kalita, Pradeep Desai, Masaki Tanemura, Bhagyashri Todankar, Tharangattu N. Narayanan
Publikováno v:
ChemistrySelect. 6:4867-4873
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab75e25c135967a56b0a7ee47e532f7c
https://doi.org/10.1002/slct.202101068
https://doi.org/10.1002/slct.202101068
Autor:
Mandar Shinde, Masaki Tanemura, Rakesh D. Mahyavanshi, Pradeep Desai, Ajinkya K. Ranade, Golap Kalita, Bhagyashri Todankar
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2040-2048
The feasibility of van der Waals (VdW) heteroepitaxy of molybdenum disulphide (MoS2) layers on gallium nitride (GaN) semiconductor has attracted significant interest in heterojunction optoelectronic device applications. Here, we report on the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7551ce2c432369948f933c994b424d2
https://doi.org/10.1007/s10854-019-02723-w
https://doi.org/10.1007/s10854-019-02723-w
Publikováno v:
ACS Applied Electronic Materials. 1:302-310
Charge transfer interaction at the interface of semiconducting layered materials is of great interest to develop effective heterojunction optoelectronic devices. Here, we demonstrate the charge transfer interaction and formation of an active heteroju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ddcb70e15cdb9fd6686eed29178a23
https://doi.org/10.1021/acsaelm.8b00069
https://doi.org/10.1021/acsaelm.8b00069
Autor:
Masaki Tanemura, Rakesh D. Mahyavanshi, Masaharu Kondo, Pradeep Desai, Ajinkya K. Ranade, Takehisa Dewa, Golap Kalita
Publikováno v:
IEEE Transactions on Electron Devices. 65:4434-4440
The heterostructures fabricated with a combination of 2-D materials and conventional semiconductors are of great interest owing to their unique optoelectronic properties. Here, we demonstrate the fabrication of a germanium (Ge)/MoS2 heterostructure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f0dd9dd739d19963f7e6bb2e051c82
https://doi.org/10.1109/ted.2018.2864174
https://doi.org/10.1109/ted.2018.2864174
Autor:
Rama Venkata Krishna Rao, Golap Kalita, Yasuhiko Hayashi, Hiroo Suzuki, Pradeep Desai, Ajinkya K. Ranade
Publikováno v:
SN Applied Sciences, Vol 3, Iss 10, Pp 1-9 (2021)
Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce76bbe3a9f92cb38431d5052a7928a8
https://ousar.lib.okayama-u.ac.jp/62436
https://ousar.lib.okayama-u.ac.jp/62436
Publikováno v:
2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO).
Integration of two-dimensional (2D) layered materials like graphene with conventional semiconductors is of great interest to develop high performance optoelectronics and other electronic devices. Gallium nitride (GaN) with a direct bandgap (~3.4 eV)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632b40b76967de516cc56993679eaeac
https://doi.org/10.1109/nano46743.2019.8993910
https://doi.org/10.1109/nano46743.2019.8993910
Autor:
Bhagyashri Todankar, Masaki Tanemura, Ajinkya K. Ranade, Takehisa Dewa, Masaharu Kondo, Pradeep Desai, Golap Kalita
Publikováno v:
Crystal Research and Technology. 56:2000198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b78f0add80896bad27ff02b2e15955d1
https://doi.org/10.1002/crat.202000198
https://doi.org/10.1002/crat.202000198
Autor:
Golap Kalita, Muhammed Emre Ayhan, Pradeep Desai, Ajinkya K. Ranade, Bhagyashri Todankar, Masaki Tanemura, Mandar Shinde
Publikováno v:
Materials Letters. 262:127074
We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (1 1 1) plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4d15751d3536b80f00c290ad4bff8e
https://doi.org/10.1016/j.matlet.2019.127074
https://doi.org/10.1016/j.matlet.2019.127074