Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Ajey Poovannummoottil Jacob"'
Autor:
Douglas H. Werner, Lei Kang, Abu Thomas, Pingjuan L. Werner, Roman Engel-Herbert, Qiang Ren, Ajey Poovannummoottil Jacob, Yusheng Bian, Y. X. Zheng
Publikováno v:
Nanoscale. 10:16667-16674
Vanadate materials such as CaVO3 and SrVO3 were recently proposed as promising alternatives to their conventional transparent conducting oxide counterparts owing to the superior capability for simultaneous realization of high optical transparency and
Autor:
Shun Sasaki, Serge Oktyabrsky, Ajey Poovannummoottil Jacob, Vadim Tokranov, Shailesh Madisetti, Steven Bentley, Makoto Hirayama, Michael Yakimov, Rohit Galatage
Publikováno v:
MRS Proceedings. 1790:13-18
Group III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and simil
Autor:
Alexander Anferov, Kasuni Nanayakkara, S. James Allen, Ajey Poovannummoottil Jacob, Alexander Kozhanov
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
Backward volume magnetostatic spin wave interference in ferromagnetic cross is explored. Spin waves are excited at the two input arms of the cross, interference signal amplitude, and phase are detected in the other two, output arms of the cross. Spin
Autor:
Serge Oktyabrsky, Steven W. Novak, Michael Yakimov, Ajey Poovannummoottil Jacob, Steven Bentley, Andrew Greene, Shailesh Madisetti, Vadim Tokranov
Publikováno v:
MRS Proceedings. 1635:115-120
The paper reports on the growth of group III-Sb’s on silicon, substrate preparation, optimization of AlGaSb metamorphic buffer, formation of defects (threading dislocations, microtwins and anti-phase boundaries) and their effect on the surface morp
Autor:
Ya Wang, Hongyi Xu, D e Li, Jin Zou, Faxian Xiu, Yong Wang, Xufeng Kou, Ajey Poovannummoottil Jacob, Kang L. Wang
Publikováno v:
Journal of Crystal Growth. 312:3034-3039
The nanostructures and magnetic properties of Ge1-xMnx thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1-4%) and different growth temperatures, have been systematically investigated by transmissi
Autor:
Jin Zou, Kang L. Wang, Xufeng Kou, Faxian Xiu, Ajey Poovannummoottil Jacob, Ya Wang, Yong Wang
Publikováno v:
Journal of Alloys and Compounds. 508:273-277
The structural evolution and magnetic property of Mn-rich clusters in GeMn thin films grown at 70 °C by molecular beam epitaxy has been systematically investigated by TEM, EDS and SQUID. It was discovered that, by controlling the Mn concentration, t
Autor:
Milan Friesel, Magnus Willander, Ajey Poovannummoottil Jacob, CJ Patel, Daniel Bensahel, Olivier Kermarrec, Tobias Myrberg, Yves Campidelli, O. Nur, Caroline Hernandez
Publikováno v:
Journal of Materials Science: Materials in Electronics. 15:411-417
We have used the strain sensitive tool two-dimensional reciprocal space mapping (2D-RSM) and high resolution rocking curves (HR-RC) to assess the effect of the layer thickness and the influence of ...
Publikováno v:
Journal of Applied Physics. 94:2337-2340
Photoluminescence experiments have been performed to systematically study the effect of thermal processing on ZnSe1−xTex (x
Autor:
Ajey Poovannummoottil Jacob, Shumin Wang, Anders Larsson, Fariba Ferdos, Yongqiang Wei, Magnus Willander, Jinghai Yang, Mahdad Sadeghi, Q.X. Zhao
Publikováno v:
Physics Letters A. 315:150-155
Nonradiative centers in InAs dots grown on GaAs substrates are investigated in this study. The emission from InAs dots close to 1.3 μm is monitored under different excitation densities and different excitation energy. The used samples were also trea
Autor:
Uğur Serincan, Ajey Poovannummoottil Jacob, Milan Friesel, Rasit Turan, Magnus Willander, O. Nur, T. Myrberg
Publikováno v:
Materials Science in Semiconductor Processing. 6:37-41
Effect of temperature and time of heat treatment on the distribution of ion-implanted nitrogen in poly Si 0.65 Ge 0.35 gate MOS samples was studied. Secondary ion mass spectrometry (SIMS) was used for the qualitative analysis of the nitrogen distribu