Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Ajay Upadhyaya"'
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Autor:
Amandee Hua, Nan Jiang, Ajay Upadhyaya, Issac Lam, Tasnim K Mouri, Dirk Hauschild, Lothar Weinhardt, Wanli Yang, Ajeet Rohatgi, Ujjwal Das, Clemens Heske
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Publikováno v:
IEEE Journal of Photovoltaics. 10:1283-1289
Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. The laser meth
Autor:
Young-Woo Ok, Christopher T. Chen, Vijay Upadhyaya, Ajay Upadhyaya, Jeong-Mo Hwang, Brian Rounsaville, Wookjin Choi, Ajeet Rohatgi
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
The plasma charge injection technology reported earlier can be a low-cost alternative to the Al 2 O 3 passivation technology. The charge stability under sunlight exposure is a key concern. We investigated the light-induced loss of injected charge for
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Phosphorus (n+) and boron (p+) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturat
Autor:
Keeya Madani, Ajay Upadhyaya, Brian Rounsaville, Ying-Yuan Huang, Ajeet Rohatgi, Vijaykumar Upadhyaya
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
This paper describes the development of a novel selective boron emitter formed a screen-printed negative resist to form vias for heavily doping regions. Ion-implantation and atmospheric pressure chemical vapor deposition (APCVD) are used to from the
Autor:
Robert Theisen, Amandee Hua, Greg Hanket, Lothar Weinhardt, Ajay Upadhyaya, Ajeet Rohatgi, Clemens Heske, Ujjwal Das, Dirk Hauschild
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Sulfur is demonstrated to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25
Autor:
Brian Rounsaville, Vijay Upadhyaya, Keeya Madani, Wookjin Choi, Young-Woo Ok, Ajay Upadhyaya, Ajeet Rohatgi, Ying-Yuan Huang, Vinodh Chandrasekaran
Publikováno v:
Solar Energy Materials and Solar Cells. 230:111183
We report on the understanding and optimization of ion-implanted boron emitters in combination with screen-printed contacts to produce very low recombination current density and high-efficiency cells with rear poly-Si/SiO2 passivated contact. Due to
Autor:
Matthew Page, Steven P. Harvey, Vincenzo LaSalvia, Benjamin G. Lee, Paul Stradins, Bill Nemeth, Ajay Upadhyaya, David L. Young, Jian V. Li
Publikováno v:
Energy Procedia. 124:295-301
We investigate how SiOx oxide interlayers prepared by different techniques (chemical, thermal) in combination with hydrogen released from an ALD Al2O3 source layer govern passivation in 1) passivated contacts based on doped poly-Si layers and tunneli