Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Ajay Kumar Kambham"'
Publikováno v:
EDFA Technical Articles. 19:22-30
This article provides an overview of atom probe tomography (APT) and its use in semiconductor FA and new product development. It discusses the basic components in an atom probe, the making of APT tips, and the general approach for data collection and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39955b49209bf86f7e40f9fb28cbffb
https://doi.org/10.31399/asm.edfa.2017-2.p022
https://doi.org/10.31399/asm.edfa.2017-2.p022
Autor:
Ajay Kumar Kambham, Jay Mody, Andreas Schulze, Pierre Eyben, Matthieu Gilbert, Wilfried Vandervorst
Publikováno v:
physica status solidi c. 11:121-129
With the transition from planar to three-dimensional device architectures such as FinFets, TFETs and nanowires, new metrology approaches are required to characterize the 3D-dopant and carrier distributions precisely, as their positioning relative to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28efa7b6bbb635bbf27b3793c4b72dcb
https://doi.org/10.1002/pssc.201300329
https://doi.org/10.1002/pssc.201300329
Publikováno v:
Ultramicroscopy. 132:65-69
With the transition from planar to three-dimensional device architectures such as Fin field-effect-transistors (FinFETs), new metrology approaches are required to meet the needs of semiconductor technology. It is important to characterize the 3D-dopa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bee987388cb5e8d6f94701f08bc132e4
https://doi.org/10.1016/j.ultramic.2012.09.013
https://doi.org/10.1016/j.ultramic.2012.09.013
Autor:
H. P. Lenka, Benjamin Vincent, Wilfried Vandervorst, Ajay Kumar Kambham, Federica Gencarelli, Arul Kumar, Manu P. Komalan, Matthieu Gilbert
Publikováno v:
Ultramicroscopy. 132:171-178
Ge (1− x ) Sn ( x ) is receiving a growing interest in the scientific community, as it has important applications in opto-electronic devices, ( as stressor) Source/Drain materials for Ge and SiGe MOSFETS. It is predicted that at 10% Sn concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d73dde8bb6cc4f2133a238f8fec69c42
https://doi.org/10.1016/j.ultramic.2013.02.009
https://doi.org/10.1016/j.ultramic.2013.02.009
Autor:
Ajay Kumar Kambham, Arul Kumar, Matthieu Gilbert, Wilfried Vandervorst, Benjamin Vincent, Federica Gencarelli
Publikováno v:
physica status solidi c. 9:1924-1930
Ge1-xSnx is receiving a growing interest in the semiconductor community as it is predicted that at ∼10% Sn concentration, unstrained Ge1-xSnx will exhibit a direct band gap leading to potentially important Opto-electronic applications. In strained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e796ad48ceb33e27b2505c23e96b0606
https://doi.org/10.1002/pssc.201200222
https://doi.org/10.1002/pssc.201200222
Publikováno v:
Microscopy Today. 20:38-44
The development of laser-assisted atom probe tomography (APT) and specimen preparation techniques using a focused ion beam equipped with high-resolution scanning electron microscopy (SEM) has significantly advanced the characterization of semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631890879f6dd6cfb964eb8f99d9a316
https://doi.org/10.1017/s1551929512000740
https://doi.org/10.1017/s1551929512000740
Publikováno v:
Ultramicroscopy. 111:535-539
With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::446e632f90603ef66dbfae61d472c9b4
https://doi.org/10.1016/j.ultramic.2011.01.017
https://doi.org/10.1016/j.ultramic.2011.01.017
Autor:
Geert Hellings, Ajay Kumar Kambham, Matthieu Gilbert, Nicolas Innocenti, Sebastian Koelling, K. De Meyer, Wilfried Vandervorst
Publikováno v:
Ultramicroscopy. 111:540-545
The laser-assisted Atom Probe has been proposed as a metrology tool for next generation semiconductor technologies requiring sub-nm spatial resolution. In order to assess its potential for the analysis of three-dimensional semiconductor structures li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9ea0a914beb6c61d6a790228c12a8f6
https://doi.org/10.1016/j.ultramic.2011.01.004
https://doi.org/10.1016/j.ultramic.2011.01.004
Publikováno v:
Microscopy and Microanalysis. 22:696-697
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1851d39f6366cdf3f5765c43def9c9
https://doi.org/10.1017/s1431927616004335
https://doi.org/10.1017/s1431927616004335
Autor:
Aaron Thean, Taiji Noda, Ajay Kumar Kambham, Wilfried Vandervorst, Christa Vrancken, Naoto Horiguchi
Publikováno v:
2013 IEEE International Electron Devices Meeting.
An analysis of dopant diffusion and defects in 3D Fin structure using an atomistic lattice kinetic Monte Carlo (KMC) approach are shown. Atomistic KMC simulations are compared with 3D methodology of Atom Probe Tomography (APT). Atomistic dopant distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dcbf9fd5f01e36dbb6fb0fbdd053651
https://doi.org/10.1109/iedm.2013.6724570
https://doi.org/10.1109/iedm.2013.6724570