Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ajay Kumar Dharmireddy"'
Publikováno v:
International Journal of Electrical and Electronics Research. 10:806-810
High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) technology is unique to the prominent devices in low power applications. To minimize leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31309c59384ba48c4fdaae4f148ce04d
https://doi.org/10.37391/ijeer.100407
https://doi.org/10.37391/ijeer.100407
Autor:
Ajay kumar Dharmireddy
Publikováno v:
Turkish Journal of Computer and Mathematics Education (TURCOMAT). 12:1245-1259
This paper proposed on basis of a perimeter-weighted-sum method for the construction of a 3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide structure. The DM model device dividing into a symmetrical and asymmetrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57827399216783e5505715dc4a2045fc
https://doi.org/10.17762/turcomat.v12i2.1180
https://doi.org/10.17762/turcomat.v12i2.1180
Autor:
Ajay Kumar Dharmireddy, Sreenivasa Rao Ijjada, K. V. Gayathri, K. Srilatha, K. Sahithi, M. Sushma, K. Madhavi
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811685491
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb8a1baa9ed988a1aa0a195f15f4461
https://doi.org/10.1007/978-981-16-8550-7_12
https://doi.org/10.1007/978-981-16-8550-7_12
