Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Ajay Kumar Dadoria"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 46-54 (2017)
With the continuous scaling down of technology in the field of integrated circuit design, low power dissipation has become one of the primary focuses of the research. With the increasing demand for low power devices, adiabatic logic gates prove to be
Externí odkaz:
https://doaj.org/article/e6b1ae436e1f4087b66bf78af2dcb6aa
In this world of Unmanned Aerial Vehicle (UAV), Flying Ad-hoc Network (FANET) is the growing field, which is based on unpredictable and dynamic topology, high mobility of nodes and 3-D movement. FANET is used in wide range of civil and commercial app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::005ccc6d9d7cb3680a499180f0a0c573
https://doi.org/10.21203/rs.3.rs-2708758/v1
https://doi.org/10.21203/rs.3.rs-2708758/v1
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 14, Iss 1, Pp 66-74 (2016)
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultra deep sub-micron (UDSM) technology. To overcome from this situation double gate device like FinFET is used which has excellent control over the thin
Externí odkaz:
https://doaj.org/article/d8032dc4bb49427d970e03973c5cd06b
Publikováno v:
Key Digital Trends Shaping the Future of Information and Management Science ISBN: 9783031311529
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a9f33b421a30d44be3613a6cbc0c4c7
https://doi.org/10.1007/978-3-031-31153-6_42
https://doi.org/10.1007/978-3-031-31153-6_42
Scaling of the transistor is a prime thrust for development of semiconductor industries. In this paper we have evaluated the impact of ION and IOFF current by applying process variation on different device parameters from 20-7nm of FinFET technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5fa4b690e2f9ea1c7d4171c68b8f96
https://doi.org/10.21203/rs.3.rs-2020682/v1
https://doi.org/10.21203/rs.3.rs-2020682/v1
Publikováno v:
Nanoscale Semiconductors ISBN: 9781003311379
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9629654ce02a90ed914ac0e0b9a3fb2f
https://doi.org/10.1201/9781003311379-7
https://doi.org/10.1201/9781003311379-7
With the quick progress in the area of digital electronics results in miniaturization of semiconductor Industries. In Deep Sub Micron regime, because of leakage current, power consumption is turn out to be a major issue; hence constant efforts are be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86300d581a5ba9aaad2dd965d2100fdd
https://doi.org/10.21203/rs.3.rs-854010/v1
https://doi.org/10.21203/rs.3.rs-854010/v1
Publikováno v:
International Journal of Innovative Technology and Exploring Engineering. 8:9-13
This paper presents the careful study of sigma-delta analog to digital convertor. The operations, characterizing parameters and totally different structures projected square measure conferred in basic type. the varied techniques and strategies for th
Autor:
Kavita Khare, Ajay Kumar Dadoria
Publikováno v:
Circuits, Systems, and Signal Processing. 38:4338-4356
Miniaturization of semiconductor industries paved the way for rapid development in the field of digital electronics. In DSM range, power dissipation has become a major concern due to leakage currents; hence, researchers are continuously trying to evo
Autor:
Ajay Kumar Dadoria, B. Hemalatha
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9789813346833
There are multitudinous applications of comparator in diversified areas, notably used in data converters. Since many years, single stage, dynamic type latch as well as double tail comparators have been designed using CMOS technology. But there is a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7e8162f4ebe61f73c3bcaa9bc75b863
https://doi.org/10.1007/978-981-33-4684-0_61
https://doi.org/10.1007/978-981-33-4684-0_61