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Autor:
Yoann Mamy Randriamihaja, C. Weintraub, Sheng Xie, Akhilesh Gautam, Yuncheng Song, B. Parameshwaran, William McMahon, Randy W. Mann, Joseph Versaggi, Ajay Anand Kallianpur
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:660-669
A novel bias-induced healing of address specific failing bits in VLSI SRAM functional arrays is demonstrated for the first time in advanced CMOS nodes. Aging effects due to bias temperature instability (BTI) resulting in device shifts are a well-know