Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Aitian Chen"'
Autor:
Mengqi Zhao, Aitian Chen, Pei-Yuan Huang, Chen Liu, Laichuan Shen, Jiahao Liu, Le Zhao, Bin Fang, Wen-Cheng Yue, Dongxing Zheng, Ledong Wang, Hao Bai, Ka Shen, Yan Zhou, Shasha Wang, Enlong Liu, Shikun He, Yong-Lei Wang, Xixiang Zhang, Wanjun Jiang
Publikováno v:
npj Quantum Materials, Vol 9, Iss 1, Pp 1-7 (2024)
Abstract Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and e
Externí odkaz:
https://doaj.org/article/60747ac8b9934dd8a277717c444c8dbe
Autor:
Yan Li, Zhitao Zhang, Chen Liu, Dongxing Zheng, Bin Fang, Chenhui Zhang, Aitian Chen, Yinchang Ma, Chunmei Wang, Haoliang Liu, Ka Shen, Aurélien Manchon, John Q. Xiao, Ziqiang Qiu, Can-Ming Hu, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a pa
Externí odkaz:
https://doaj.org/article/4e7c769f963a4c85abe54f0e7c48d6a4
Autor:
Yinchang Ma, Yuan Yan, Linqu Luo, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor th
Externí odkaz:
https://doaj.org/article/b13f4d1bcf104a229532b64af0f695b4
Autor:
Hanin Algaidi, Chenhui Zhang, Yinchang Ma, Chen Liu, Aitian Chen, Dongxing Zheng, Xixiang Zhang
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011124-011124-8 (2024)
Fe3GaTe2 is a promising van der Waals material for future spintronic applications because of its intrinsic above-room-temperature ferromagnetism. Herein, high quality Fe3GaTe2 single crystals were successfully grown by the chemical vapor transport me
Externí odkaz:
https://doaj.org/article/640919c675e4483c9a003d54da7f2b81
Autor:
Yimo Fan, Jiawei Wang, Aitian Chen, Kai Yu, Mingmin Zhu, Yunxin Han, Sen Zhang, Xianqing Lin, Haomiao Zhou, Xixiang Zhang, Qiang Lin
Publikováno v:
Nanomaterials, Vol 14, Iss 7, p 596 (2024)
The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibilit
Externí odkaz:
https://doaj.org/article/83ca1b4320d9409cbb2f7371719c97d2
Autor:
Hao Wu, Aitian Chen, Peng Zhang, Haoran He, John Nance, Chenyang Guo, Julian Sasaki, Takanori Shirokura, Pham Nam Hai, Bin Fang, Seyed Armin Razavi, Kin Wong, Yan Wen, Yinchang Ma, Guoqiang Yu, Gregory P. Carman, Xiufeng Han, Xixiang Zhang, Kang L. Wang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ dev
Externí odkaz:
https://doaj.org/article/ff4db472b985428aa504245b3de6e97f
Autor:
Aitian Chen, Yan Wen, Bin Fang, Yuelei Zhao, Qiang Zhang, Yuansi Chang, Peisen Li, Hao Wu, Haoliang Huang, Yalin Lu, Zhongming Zeng, Jianwang Cai, Xiufeng Han, Tom Wu, Xi-Xiang Zhang, Yonggang Zhao
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnet
Externí odkaz:
https://doaj.org/article/e722340a071740a2aeccba671b19ad78
Publikováno v:
Materials, Vol 14, Iss 16, p 4623 (2021)
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and c
Externí odkaz:
https://doaj.org/article/73de1c9f89fe4067806c625a93969760
Autor:
Baoshan Cui, Aitian Chen, Xu Zhang, Bin Fang, Zhaozhuo Zeng, Peng Zhang, Jing Zhang, Wenqing He, Guoqiang Yu, Peng Yan, Xiufeng Han, Kang L. Wang, Xixiang Zhang, Hao Wu
Publikováno v:
Advanced Materials.
Autor:
Aitian Chen, Hong-Guang Piao, Chenhui Zhang, Xiao-Ping Ma, Hanin Algaidi, Yinchang Ma, Yan Li, Dongxing Zheng, Ziqiang Qiu, Xi-Xiang Zhang
Publikováno v:
Materials Horizons.
The ordered magnetic strip domains in Ni films are switched between the y- and x-axes driven by electric-field due to electric-field-modulated in-plane magnetic anisotropies via strain-mediated magnetoelectric coupling.