Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Aiswarya Pradeepkumar"'
Publikováno v:
Applied Sciences, Vol 10, Iss 12, p 4350 (2020)
The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literatu
Externí odkaz:
https://doaj.org/article/73fc3069c77f43d3988ffc696c58744c
Autor:
Shaikh Nayeem Faisal, Tien-Thong Nguyen Do, Tasauf Torzo, Daniel Leong, Aiswarya Pradeepkumar, Chin-Teng Lin, Francesca Iacopi
Publikováno v:
ACS Applied Nano Materials. 6:5440-5447
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8a0a04baee8e27ff1ba3067b6b01b86
https://doi.org/10.1021/acsanm.2c05546
https://doi.org/10.1021/acsanm.2c05546
Autor:
D. Kurt Gaskill, Chang Liu, Mojtaba Amjadipour, F Isa, Aiswarya Pradeepkumar, Marcin Zielinski, Hansika Sirikumara, Michael S. Fuhrer, Avi Bendavid, Thushari Jayasekara, Neeraj Mishra, Francesca Iacopi
Publikováno v:
ACS Applied Nano Materials. 3:830-841
Copyright © 2019 American Chemical Society. The synthesis of graphene on cubic silicon carbide on silicon pseudosubstrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd9ee3600ca823b5358694872c97ee83
https://doi.org/10.1021/acsanm.9b02349
https://doi.org/10.1021/acsanm.9b02349
Publikováno v:
2D Materials. 9:022002
Graphene has attracted considerable attention ever since the discovery of its unprecedented properties, including its extraordinary and tunable electronic and optical properties. In particular, applications within the microwave to terahertz frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e7e291f5d9f6c383b2ffafe09cbc0de
https://doi.org/10.1088/2053-1583/ac59d1
https://doi.org/10.1088/2053-1583/ac59d1
Publikováno v:
Applied Sciences, Vol 10, Iss 4350, p 4350 (2020)
The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2f3235fceb9b5ef91ce726831f5b810
https://www.mdpi.com/2076-3417/10/12/4350
https://www.mdpi.com/2076-3417/10/12/4350
© 2018 Trans Tech Publications, Switzerland. We have investigated the electrical conduction in epitaxial cubic silicon carbide films on low-doped and high-resistive silicon substrates. The electrical properties of the film/substrate system such as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d62215419b88f5cd1cefa4752c464c1c
https://hdl.handle.net/10453/129941
https://hdl.handle.net/10453/129941
Autor:
Francesca Iacopi, Jack Hellerstedt, Aiswarya Pradeepkumar, Neeraj Mishra, Atieh Ranjbar Kermany, John J. Boeckl, Michael S. Fuhrer
© 2016 Author(s). Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8d3b5c1ea8a0b455723c7b2bd8e5f49
https://hdl.handle.net/10453/106071
https://hdl.handle.net/10453/106071
Autor:
Aiswarya Pradeepkumar, Marcin Zielinski, D. Kurt Gaskill, Francesca Iacopi, Giovanni Verzellesi, Matteo Bosi
Publikováno v:
Journal of applied physics 123 (2018): 215103-1. doi:10.1063/1.5026124
info:cnr-pdr/source/autori:Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca/titolo:Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon/doi:10.1063%2F1.5026124/rivista:Journal of applied physics/anno:2018/pagina_da:215103-1/pagina_a:/intervallo_pagine:215103-1/volume:123
info:cnr-pdr/source/autori:Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca/titolo:Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon/doi:10.1063%2F1.5026124/rivista:Journal of applied physics/anno:2018/pagina_da:215103-1/pagina_a:/intervallo_pagine:215103-1/volume:123
© 2018 Author(s). Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-establi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71ef2a8677a524471d4291b1f1273340
https://doi.org/10.1063/1.5026124
https://doi.org/10.1063/1.5026124