Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Aimi Syairah Safaruddin"'
Autor:
Chuanjun Wu, Juan Paolo S. Bermundo, Aimi Syairah Safaruddin, Atsuko Yamamoto, Yukiharu Uraoka
Publikováno v:
ACS Omega, Vol 9, Iss 32, Pp 34735-34742 (2024)
Externí odkaz:
https://doaj.org/article/cff3d822a8484388930f0b44ce58746a
Autor:
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Mutsunori Uenuma, Atsuko Yamamoto, Mutsumi Kimura, Yukiharu Uraoka
Publikováno v:
2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Autor:
Aimi Syairah Safaruddin, Yoshida Naofumi, Toshiaki Nonaka, Yasuaki Ishikawa, Mami N. Fujii, Yukiharu Uraoka, Juan Paolo Bermundo
Publikováno v:
IEEE Electron Device Letters. 41:1372-1375
We report the enhancement in the electrical performance of solution-processed amorphous InZnO ( $a$ -IZO) thin-film transistors (TFTs) through incorporation of low-temperature photosensitive polysilsesquioxane (P-PSQ) passivation. P-PSQ passivated TF
Autor:
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Michael Paul A. Jallorina, Atsuko Yamamoto, Yukiharu Uraoka
Publikováno v:
Materials Science in Semiconductor Processing. 146:106669
Autor:
Juan Paolo Bermundo, Aimi Syairah Safaruddin, Yoshida Naofumi, Ployrung Kesorn, Yukiharu Uraoka
Publikováno v:
Journal of Physics D: Applied Physics. 55:075102
We demonstrate a solution processed gate insulator (GI) with high dielectric constant (high-k) of up to ∼8.9 for high performance and low voltage operation amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). High mobilities of up to ∼30 cm2
Autor:
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Michael Paul A. Jallorina, Mami N. Fujii, Yukiharu Uraoka
Publikováno v:
Proceedings of the International Display Workshops. :212
Autor:
Mami N. Fujii, Toshiaki Nonaka, Juan Paolo Bermundo, Yukiharu Uraoka, Yasuaki Ishikawa, Aimi Syairah Safaruddin, Yoshida Naofumi
Publikováno v:
Applied Physics Express. 12:064002
This paper presents a low-temperature solution-processed passivation material based on polysilsesquioxane (PSQ) which greatly improves electrical performance and stability of solution-processed amorphous InZnO (a-IZO) thin-film transistors (TFTs). PS
Autor:
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Naofumi Yoshida, Toshiaki Nonaka, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
Publikováno v:
Applied Physics Express; Jun2019, Vol. 12 Issue 6, p1-1, 1p