Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Aidas Baltusis"'
Autor:
Justin Norman, John E. Bowers, Christopher R. Fitch, Igor P. Marko, Stephen J. Sweeney, Daehwan Jung, Aidas Baltusis
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temper
Publikováno v:
Conference on Lasers and Electro-Optics.
We propose and investigate a novel, rapid method for contactless spatial imaging of minority charge carrier lifetimes based on compressed sensing. The proposed method demonstrates an order of magnitude potential increase in imaging speeds.
Autor:
Justin Norman, Alf R. Adams, Aidas Baltusis, Daehwan Jung, Igor P. Marko, Christopher R. Fitch, John E. Bowers, Stephen J. Sweeney
Publikováno v:
Novel In-Plane Semiconductor Lasers XVIII.
We investigate the temperature and pressure dependence of a series of intrinsic and modulation p-doped InAs-based dot-in-well (DWELL) laser diodes grown on silicon substrates. Temperature dependence of the threshold current density (Jth) and pure spo
Autor:
Justin Norman, Aidas Baltusis, Stephen J. Sweeney, Alf R. Adams, Daehwan Jung, John E. Bowers, Igor P. Marko
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
The temperature performance of InAs/Si quantum dot lasers is studied using temperature-dependent characterization of the stimulated and spontaneous emission and discussed in terms of localization effects due to the inhomogeneity of the active region