Mechanisms of Liquid-Phase Exfoliation for the Production of Graphene

Autor: Claudia Backes, Robert J. Young, Zheling Li, Wen Zhao, Xun Zhang, Aidan P Conlan, Feng Ding, Sarah J. Haigh, Jonathan N. Coleman, Evan Tillotson, Alexander Zhukov, Kostya S. Novoselov

Publikováno v: ACS Nano
Li, Z, Young, R J, Backes, C, Zhao, W, Zhang, X, Zhukov, A, Tillotson, E, Conlan, A P, Ding, F, Haigh, S J, Novoselov, K S & Coleman, J N 2020, ' Mechanisms of Liquid-Phase Exfoliation for the Production of Graphene ', ACS Nano . https://doi.org/10.1021/acsnano.0c03916

Liquid- phase exfoliation (LPE) is the principal method of producing two-dimensional (2D) materials such as graphene in large quantities with a good balance between quality and cost and is now widely adopted by both the academic and industrial sector

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57c47d76f81441c75b1254f0b6860ab3
https://doi.org/10.1021/acsnano.0c03916

Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope

Autor: David Cooper, Minh Anh Luong, Grigore Moldovan, Eva Monroy, Martien Den Hertog, Aidan P. Conlan, Pascal Gentile

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2021, 33 (3), pp.035712. ⟨10.1088/1361-6528/ac2e73⟩
Nanotechnology, 2021, 33 (3), pp.035712. ⟨10.1088/1361-6528/ac2e73⟩

Here, we use electron beam induced current (EBIC) in a scanning transmission electron microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si-rich/SiGe axial nanowire heterostructures fabricated by thermal propagation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5793b924636193bb5db8f1347c0ae17b
https://doi.org/10.1088/1361-6528/ac2e73

Improved measurement of electric fields by nanobeam precession electron diffraction

Autor: Aidan P. Conlan, Victor Boureau, David Cooper, Sebastien Martinie, Jean-Luc Rouvière, L. Bruas

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2020, 127 (20), pp.205703. ⟨10.1063/5.0006969⟩

The electric field in a silicon p-n junction has been measured using pixelated scanning transmission electron microscopy. By using a convergence angle of 3.2mrad, a spatial resolution better than 1nm can be achieved leading to a rigid shift of the tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46756ff6e2bed3d8a2fd2bb9f2cfc70d
https://infoscience.epfl.ch/record/278003