Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Aida Sheibani"'
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Gunder, Aida Sheibani1 (AUTHOR) asheiban@uark.edu, Paillard, Charles2,3 (AUTHOR), Pandit, Abhyian3 (AUTHOR), Haleoot, Raad1,4 (AUTHOR), Bellaiche, Laurent1,3 (AUTHOR), Hamad, Bothina1,3,5 (AUTHOR)
Publikováno v:
European Physical Journal B: Condensed Matter. Jan2021, Vol. 94 Issue 1, p1-10. 10p.
Autor:
Raad Haleoot, Abhyian Pandit, Bothina Hamad, Laurent Bellaiche, Aida Sheibani Gunder, Charles Paillard
Publikováno v:
The European Physical Journal B: Condensed Matter and Complex Systems
The European Physical Journal B: Condensed Matter and Complex Systems, Springer-Verlag, 2021, 94 (1), pp.11. ⟨10.1140/epjb/s10051-020-00019-1⟩
The European Physical Journal B: Condensed Matter and Complex Systems, Springer-Verlag, 2021, 94 (1), pp.11. ⟨10.1140/epjb/s10051-020-00019-1⟩
First principle calculations are performed to investigate the effect of polar order strength on the thermoelectric (TE) properties of GeTe alloy in its rhombohedral structure. The variation in the polarization state using various ferroelectric distor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b9005db39900135f95187347bbb3ad
http://hdl.handle.net/20.500.12278/37182
http://hdl.handle.net/20.500.12278/37182
