Výsledky vyhledávání - "Aichinger, Thomas"

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Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Autor: Feil, Maximilian W., Weger, Magdalena, Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas C., Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor

Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombinati

Externí odkaz: http://arxiv.org/abs/2404.13463

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Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy

Autor: Berens, Judith, Bichelmaier, Sebastian, Fernando, Nathalie K., Thakur, Pardeep K., Lee, Tien-Lin, Mascheck, Manfred, Wiell, Tomas, Eriksson, Susanna K., Kahk, J. Matthias, Lischner, Johannes, Mistry, Manesh V., Aichinger, Thomas, Pobegen, Gregor, Regoutz, Anna

SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and t

Externí odkaz: http://arxiv.org/abs/1912.06592

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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface

Autor: Gruber, Gernot, Cottom, Jonathon, Meszaros, Robert, Koch, Markus, Pobegen, Gregor, Aichinger, Thomas, Peters, Dethard, Hadley, Peter

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices

Externí odkaz: http://arxiv.org/abs/1709.08664

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