Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Ai-Gen Xie"'
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107699- (2024)
From existing old photoelectric emission PEE and secondary electron emission SEE models and the process that 50 % excited electrons are treated as as those moving backward emission surface, this study develops new SEE model for negative electron affi
Externí odkaz:
https://doaj.org/article/0ba6538de2d242f8a262d4bf225f6801
Publikováno v:
Results in Physics, Vol 28, Iss , Pp 104554- (2021)
The universal formulae for λ(χreal, Eg, T) and λ(χreal, Eg, T)p of insulator having less impurities are experimentally proved, where λ(χreal, Eg, T) is the mean escape depth at Kelvin temperature T of secondary electrons emitted from insulators
Externí odkaz:
https://doaj.org/article/a0339fc779214ca8bcabd7b632690e58
Publikováno v:
Results in Physics, Vol 26, Iss , Pp 104350- (2021)
This paper studies an electron-induced secondary electron model ESEM for photoelectric sensitivity PS and quantum efficiency QE of metal surfaces near threshold frequency γ0, which was developed from Sommerfeld’s theory and the theories of transpo
Externí odkaz:
https://doaj.org/article/6664ae4497a3417ab51730bfeb78dba7
Publikováno v:
Results in Physics, Vol 20, Iss , Pp 103745- (2021)
Based on expression of primary range R and the R at Epo ≥ 10.0 keV and L at Epo ≥ 1.0 keV calculated by ESTAR program [1], the method of obtaining formula for R at Epo ≥ 1.0 keV is presented; where Epo is incident energy of primary electron, an
Externí odkaz:
https://doaj.org/article/b83af9c2ec364a54a9bb67aa700b8dd3
Publikováno v:
Results in Physics, Vol 18, Iss , Pp 103120- (2020)
The formulas for temperature dependence of λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities were deduced and proved to be true; λ(χreal, Eg, T) is the mean escape depth of secondary electrons emitted from insulat
Externí odkaz:
https://doaj.org/article/e46e469f6ca643f4a6ab4f6b9efd70ea
Publikováno v:
Results in Physics, Vol 15, Iss , Pp - (2019)
Based on processes and characteristics of secondary electron emission (SEE), experimental data and the relations among parameters of secondary electron yield from semiconductors δ, the formula for δ in the range of 20 eV ≤ Epo ≤ 800 eV of semic
Externí odkaz:
https://doaj.org/article/9ca9d31f66cd43099af50433e5e0e1ea
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125115-125115-13 (2018)
No rude approximations were made in the course of deducing formula for B(χ, Eg) as a function of parameters of secondary electron emission SEE; where B(χ, Eg) is the probability that an internal secondary electron escapes into vacuum upon reaching
Externí odkaz:
https://doaj.org/article/acd3d3e4c0744a58b2dc192e854564e1
Publikováno v:
Nuclear Science and Techniques. 33
Publikováno v:
Chinese Physics B. 32:048102
The formulae for parameters of a negative electron affinity semiconductor (NEAS) with large mean escape depth of secondary electrons λ (NEASLD) are deduced. The methods for obtaining parameters such as λ, B, E pom and the maximum δ and δ at 100.0