Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Ai‐Dong Li"'
Autor:
Qiang Ren, Xin‐Yue Zhang, Ji‐An Chen, Jia‐Bin Fang, Tao‐Qing Zi, Lin Zhu, Chang Liu, Min Han, Yan‐Qiang Cao, Ai‐Dong Li
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Highly sensitive and reliable hydrogen detection is prerequisite for the large‐scale implementation of green energy hydrogen. It remains a tough challenge to get a highly selective H2 sensor to low concentration H2 gas with low working tem
Externí odkaz:
https://doaj.org/article/7fae342a470e4963b901eee5179b6112
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Strain sensors have attracted tremendous attention in healthcare monitoring and human–computer interaction due to their great potential in intelligent equipment. However, conventional strain sensors cannot possess high sensitivity, wide st
Externí odkaz:
https://doaj.org/article/c12a9869eb2149c3bc8c278ecbb3e9bb
Autor:
Chang Liu, Lin Zhu, Jing‐Kai Weng, Yu‐Chen Li, Zhuo Chen, Jin Lei, Tao‐Qing Zi, Di Wu, Wei Fa, Shuang Chen, Bin Liang, Ai‐Dong Li
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 2, Pp n/a-n/a (2023)
Abstract Flexible artificial synapses, a conjunctive product of brain‐inspired neuromorphic computing and wearable electronics, arouse enormous interest in highly connected and energy‐efficient neural networks. The organic–inorganic hybrid mate
Externí odkaz:
https://doaj.org/article/5bb45a997bf347e59c9c52a3b396c875
Publikováno v:
APL Materials, Vol 9, Iss 12, Pp 121110-121110-8 (2021)
In this work, we fabricated the Pt/Hf-based hydroquinone (Hf-HQ)/Al2O3/TiN/Si bilayer hybrid memory by molecular layer deposition/atomic layer deposition. The hybrid memory units exhibit electroforming-free bipolar resistive switching (RS) characteri
Externí odkaz:
https://doaj.org/article/c0aa67ec2f6c4dc0b3e8e1672cf85d70
Autor:
Jin Lei, Song Sun, Yuchen Li, Ping Xu, Chang Liu, Shaozhong Chang, Genglai Yang, Shuang Chen, Wei Fa, Di Wu, Ai-Dong Li
Publikováno v:
The Journal of Physical Chemistry Letters. 14:1389-1394
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7c7a7c00d1e731b91fff38d8a77de5
https://doi.org/10.1021/acs.jpclett.2c03850
https://doi.org/10.1021/acs.jpclett.2c03850
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract ZnO nano-clips with better monodispersion were prepared successfully using zinc acetate hydrate (Zn(OAc)2·nH2O) as Zn source and ethylene glycol (EG) as solvent by a simple solution-based route-polyol process. The effect of solution concent
Externí odkaz:
https://doaj.org/article/4c5359a87a7f4d4ab4972326a676379f
Autor:
Ji-Zhou Kong, Hai-Fa Zhai, Wei Zhang, Shan-Shan Wang, Xi-Rui Zhao, Min Li, Hui Li, Ai-Dong Li, Di Wu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)
Abstract N-doped ZnO/g-C3N4 composites have been successfully prepared via a facile and cost-effective sol-gel method. The nanocomposites were systematically characterized by XRD, FE-SEM, HRTEM, FT-IR, XPS, and UV-vis DRS. The results indicated that
Externí odkaz:
https://doaj.org/article/56941be6c1e14aefbdada7075b487bea
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-9 (2017)
Abstract Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were
Externí odkaz:
https://doaj.org/article/6926d77060ae42c08cbc599610ab6fc5
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract A simple high-throughput approach is presented in this work to fabricate the Au nanoparticles (NPs)/nanogap/Au NPs structure for surface enhanced Raman scattering (SERS). This plasmonic nanostructure can be prepared feasibly by the combinati
Externí odkaz:
https://doaj.org/article/6e968ae05ec84c25979afbde82f8391f
Autor:
Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, Di Wu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-11 (2017)
Abstract The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt a
Externí odkaz:
https://doaj.org/article/dd9dcf15d5fb4525a6e51197079d98c9