Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ai, Lixia"'
Autor:
Haoyang Wu, Yue Hao, Jincheng Zhang, Xiaomeng Fan, Huake Su, Hongchang Tao, Jinjuan Du, Ying Zhao, Ruoshi Peng, Ai Lixia, Peixian Li, Shengrui Xu
Publikováno v:
IEEE Electron Device Letters. 42:1346-1349
GaN-based light-emitting diodes (LEDs) grown on the insulating sapphire substrate suffer from a severe current crowding effect. To alleviate the current crowding effect, we demonstrate a current spreading structure for 365-nm ultraviolet LED using Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a42d50660a5606d0bae4aa24ec51a33e
https://doi.org/10.1109/led.2021.3100545
https://doi.org/10.1109/led.2021.3100545
Autor:
Xu, Wenqiang, Xu, Shengrui, Tao, Hongchang, Gao, Yuan, Fan, Xiaomeng, Du, Jinjuan, Ai, Lixia, Peng, Liping, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue
Publikováno v:
In Materials Letters 15 December 2021 305
Akademický článek
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Autor:
Jincheng Zhang, Jinfeng Zhang, Xiaomeng Fan, Jinjuan Du, Yuan Gao, Yue Hao, Hongchang Tao, Liping Peng, Shengrui Xu, Wenqiang Xu, Ai Lixia
Publikováno v:
Materials Letters. 305:130806
The single crystal GaN film was successfully grown on the polycrystalline diamond substrate using a h-BN insertion layer by metal–organic chemical vapor deposition, which solved the problem that GaN and diamond are difficult to combine due to the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8b769af0714e182465cfbf3f490e9e
https://doi.org/10.1016/j.matlet.2021.130806
https://doi.org/10.1016/j.matlet.2021.130806