Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing.

Autor: Das, Suman, Gu, Hengfei, Wang, Lu, Ahyi, Ayayi, Feldman, Leonard C., Garfunkel, Eric, Kuroda, Marcelo A., Dhar, Sarit

Publikováno v: Journal of Applied Physics; 6/7/2023, Vol. 133 Issue 21, p1-7, 7p

High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors.

Autor: Das, Suman, Isaacs-Smith, Tamara, Ahyi, Ayayi, Kuroda, Marcelo A., Dhar, Sarit

Publikováno v: Journal of Applied Physics; 12/14/2021, Vol. 130 Issue 22, p1-6, 6p

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Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs).

Autor: Khanal, Min P., Uprety, Sunil, Mirkhani, Vahid, Wang, Shiqiang, Yapabandara, Kosala, Hassani, Ehsan, Isaacs-Smith, Tamara, Ahyi, Ayayi C., Bozack, Michael J., Oh, Tae-Sik, Park, Minseo

Publikováno v: Journal of Applied Physics; 2018, Vol. 124 Issue 21, pN.PAG-N.PAG, 12p, 1 Color Photograph, 1 Black and White Photograph, 3 Charts, 12 Graphs

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes.

Autor: Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, Dhar, Sarit

Publikováno v: Journal of Applied Physics; 2016, Vol. 119 Issue 10, p1-6, 6p, 6 Graphs