Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ahtisham Pampori"'
Autor:
Mohammad Zaid, Purnima Kumari, Ahtisham Pampori, Mohammad Sajid Nazir, Umakant Goyal, Meena Mishra, Yogesh Singh Chauhan
Publikováno v:
IEEE Access, Vol 12, Pp 53475-53484 (2024)
This study introduces a new design for a low noise amplifier (LNA) consisting of two stages taking advantage of the inherent lossy properties of the input matching components. By doing this, the design balances the minimum noise figure (NF) and stabi
Externí odkaz:
https://doaj.org/article/6019274196c441698eb6cda5a5392b9b
Autor:
Shivendra Singh Parihar, Ahtisham Pampori, Praveen Dwivedi, Jun Huang, Weike Wang, Kimihiko Imura, Chenming Hu, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 444-455 (2023)
This paper aims to provide insights into the thermal, analog, and RF attributes, as well as a novel modeling methodology, for the FinFET at the industry standard 5nm CMOS technology node. Thermal characterization shows that for a 165K change in tempe
Externí odkaz:
https://doaj.org/article/b4bf8956ad2e410980e188f2fa43c719
Autor:
Rasik Rashid Malik, Mehak Ashraf Mir, Zarak Bhat, Ahtisham Pampori, Yogesh Singh Chauhan, Sheikh Aamir Ahsan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 789-797 (2021)
In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consisten
Externí odkaz:
https://doaj.org/article/69ef912a32b0470d9b60c8a4c9d9f025
Autor:
Neha Bajpai, Ahtisham Pampori, Paramita Maity, Manish Shah, Amitava Das, Yogesh Singh Chauhan
Publikováno v:
IEEE Access, Vol 9, Pp 124900-124909 (2021)
This paper presents a comparative performance analysis of a single-stage GaAs Low-Noise Power Amplifier (LNPA) fabricated in a $0.25~\mu $ m pHEMT process to mitigate co-site interference across multiple frequencies in the L- and S-bands. We compare
Externí odkaz:
https://doaj.org/article/1bf18c4bfd7440f38385cc4fcc1c00c7
Autor:
Mohammad Sajid Nazir, Pragya Kushwaha, Ahtisham Pampori, Sheikh Aamir Ahsan, Yogesh Singh Chauhan
Publikováno v:
IEEE Transactions on Electron Devices. 69:6016-6022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46b130809046b127e7049af21b9539a6
https://doi.org/10.1109/ted.2022.3204523
https://doi.org/10.1109/ted.2022.3204523
Autor:
Mohammmad Sajid Nazir, Ahtisham Pampori, Yawar Hayat Zarkob, Anirban Kar, Yogesh Singh Chauhan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cbaad204cb85ce1c59bd2568b694e4c
https://doi.org/10.1109/edtm55494.2023.10102944
https://doi.org/10.1109/edtm55494.2023.10102944
Autor:
Md Hasnain Ansari, Raghvendra Dangi, Ahtisham Pampori, Pragya Kushwaha, Ekta Yadav, Santanu Sinha, Yogesh Singh Chauhan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb8d1bf2293d6d7ec352b6a48a761e66
https://doi.org/10.1109/edtm55494.2023.10102930
https://doi.org/10.1109/edtm55494.2023.10102930
Publikováno v:
2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17e158bf60948afbf3a06ec9c37b0489
https://doi.org/10.1109/upcon56432.2022.9986379
https://doi.org/10.1109/upcon56432.2022.9986379
Publikováno v:
2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca8dffa18255b905cdc3e449fc04cc2f
https://doi.org/10.1109/upcon56432.2022.10005845
https://doi.org/10.1109/upcon56432.2022.10005845
Autor:
Ahtisham Pampori, Sheikh Aamir Ahsan, Sanjay Kumar Tomar, Yogesh Singh Chauhan, Meena Mishra, Raghvendra Dangi, Umakant Goyal
Publikováno v:
IEEE Transactions on Electron Devices. 68:3302-3307
In this article, we present a surface-potential-based approach to model the bias-dependent effective velocity observed in AlGaN/GaN high-electron-mobility transistors (HEMTs) due to optical phonon scattering. Our model precisely reproduces the progre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378c08c61b5633a5d65177c3d233fc51
https://doi.org/10.1109/ted.2021.3078717
https://doi.org/10.1109/ted.2021.3078717