Single and two sub-band transport in double gated silicon quantum wells

Autor: Prunnila, Mika, Kivioja, Jani, Ahopelto, Jani

Publikováno v: Prunnila, M, Kivioja, J & Ahopelto, J 2007, Single and two sub-band transport in double gated silicon quantum wells . in Proceedings of the XLI Annual Conference of the Finnish Physics Society . University of Helsinki, University of Helsinki: Department of Physics. Report Series in Physics, no. HU-P-267, pp. 175, Physics Days-Fysiikan Päivät 2007, Tallinn, Estonia, 15/03/07 .

Development of silicon-on-insulator (SOI) technology has enabled fabrication of silicon heterostructures, where thin single crystalline Si film is sandwiched between amorphous SiO2 layers. This kind of SiO2-Si-SiO2 quantum well provides a unique mate

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