Zobrazeno 1 - 10
of 3 907
pro vyhledávání: '"Ahn, J H"'
Publikováno v:
Appl. Phys. Lett. 115, 043104 (2019)
The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\i
Externí odkaz:
http://arxiv.org/abs/1903.09389
Akademický článek
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Autor:
Kim, J.H., Kim, S.H., Jeon, M.K., Kim, J.E., Kim, K.H., Yun, K.-H., Jeung, H.-C., Rha, S.Y., Ahn, J.-H., Kim, H.S.
Publikováno v:
In ESMO Open October 2021 6(5)
Autor:
Goto, M., Yamamoto, T., Han, S.Z., Kim, S., Kitamura, J., Yakushiji, T., Ahn, J-H., Takanami, R., Utsunomiya, T., Lee, J.
Publikováno v:
In International Journal of Fatigue January 2021 142
Autor:
Goto, M., Yamamoto, T., Han, S.Z., Lim, S.H., Kim, S., Ahn, J.-H., Lee, S.J., Yakushiji, T., Lee, J.
Publikováno v:
In Materials Science & Engineering A 24 June 2020 788
Autor:
Zaugg, C. A., Sun, Z., Wittwer, V. J., Popa, D., Milana, S., Kulmala, T., Sundaram, R. S., Mangold, M., Sieber, O. D., Golling, M., Lee, Y., Ahn, J. H., Ferrari, A. C., Keller, U.
Publikováno v:
Optics Expr. 21, 31548 (2013)
We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. Th
Externí odkaz:
http://arxiv.org/abs/1310.2132
Autor:
Goto, M., Iwamura, T., Han, S.Z., Kim, S., Yamamoto, T., Lim, S.H., Ahn, J-H., Kitamura, J., Lee, J.
Publikováno v:
In International Journal of Fatigue June 2019 123:135-143
Autor:
Goto, M., Yamamoto, T., Han, S.Z., Lim, S.H., Kim, S., Iwamura, T., Kitamura, J., Ahn, J.-H., Yakushiji, T., Lee, J.
Publikováno v:
In Materials Science & Engineering A 18 February 2019 747:63-72
Autor:
Patra, A. K., Singh, S., Barin, B., Lee, Y., Ahn, J. -H., del Barco, E., Mucciolo, E. R., Özyilmaz, B.
Publikováno v:
Appl. Phys. Lett. 101, 162407 (2012)
We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert damping at the P
Externí odkaz:
http://arxiv.org/abs/1211.0492
Autor:
Lagatsky, A. A., Sun, Z., Kulmala, T. S., Sundaram, R. S., Milana, S., Torrisi, F., Antipov, O. L., Lee, Y., Ahn, J. H., Brown, C. T. A., Sibbett, W., Ferrari, A. C.
Publikováno v:
Appl. Phys. Lett. 102, 013113 (2013)
We report a 2\mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequen
Externí odkaz:
http://arxiv.org/abs/1210.7042