Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ahmet Hakan Coskun"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:178-187
Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon–germanium LNAs is explo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de65ccd5f297ddbd9c9c302e2af7b3cf
https://doi.org/10.1109/tmtt.2015.2497685
https://doi.org/10.1109/tmtt.2015.2497685
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
The design and characterization of a cryogenic SiGe HBT low-noise amplifier optimized for high dynamic range is presented. The design leverages cryogenic SiGe HBT models capable of simultaneously describing weak nonlinearity, noise, and small-signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ab1a25b38517364acd172b4f2a375e
https://doi.org/10.1109/mwsym.2017.8059051
https://doi.org/10.1109/mwsym.2017.8059051
Autor:
Ahmet Hakan Coskun, Joseph C. Bardin
Publikováno v:
IEEE Microwave Magazine. 20:46-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd4774bd66953aec3ccbd21761d153b6
https://doi.org/10.1109/mmm.2019.2891806
https://doi.org/10.1109/mmm.2019.2891806
Publikováno v:
IEEE Electron Device Letters. 35:998-1000
The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with f t /fmax values of ~300 GHz. Noise models have been extracted and the predicted perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf520c26526f16dc6d13b1af5d964c80
https://doi.org/10.1109/led.2014.2343942
https://doi.org/10.1109/led.2014.2343942
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The broadband noise performance of silicon ger- manium (SiGe) and compound semiconductor (CS) heterojunc- tion bipolar transistors (HBTs) is presented. The key noise mechanisms in HBTs are summarized to provide a framework through which the noise lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eaaba1945bea4bb14df7b2d5be480ab
https://doi.org/10.1109/bctm.2014.6981277
https://doi.org/10.1109/bctm.2014.6981277
Publikováno v:
2014 IEEE Radio Frequency Integrated Circuits Symposium.
A novel broadband current-mode noise source implemented in 32 nm SOI CMOS and appropriate for the in-situ testing of wide-band millimeter-wave low noise amplifiers is presented. The noise source was used to characterize a 20-35 GHz low noise amplifie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cea789a2e01960ca259d8a94dded24a
https://doi.org/10.1109/rfic.2014.6851655
https://doi.org/10.1109/rfic.2014.6851655
Autor:
Joseph C. Bardin, Ahmet Hakan Coskun
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
The noise performance of a 32 nm SOI CMOS process is systematically studied for ambient temperatures in the range of 6-293 K. For a fixed transconductance bias, an order of magnitude improvement in calculated T min is observed by cooling from room te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1806c73d1458448179823db5ff3042b
https://doi.org/10.1109/mwsym.2014.6848614
https://doi.org/10.1109/mwsym.2014.6848614
Autor:
A. Dayalu, Deepnarayan Gupta, Su-Wei Chang, Ahmet Hakan Coskun, Joseph C. Bardin, Prasana Ravindran, M. G. Sadrabadi, S. Sarwana, A. Inamdar
Publikováno v:
IEEE Transactions on Applied Superconductivity. 23:1701806-1701806
High-speed digital data links from 4-K superconductor electronics to room temperature are challenging due to the fact that energy/bit for single flux quantum logic is many (six) orders of magnitude lower than that of standard room-temperature logic.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab46c54cd373be36af5cb6789ff784a
https://doi.org/10.1109/tasc.2013.2257231
https://doi.org/10.1109/tasc.2013.2257231